Kinetics of a quasi-one-dimensional electron gas in a transverse magnetic field. I. Arrays of quantum wires

Boǐko, I. I.; Sheka, V. I.; Vasilopoulos, P.

doi:10.1103/physrevb.47.15809

Cited by 5 publications

(6 citation statements)

References 10 publications

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“…To compute the charged carrier mobility we will use the quantum kinetic approach [14][15][16][17] that is based on the oneparticle density matrix and the model non-equilibrium distribution function in form of the shifted Fermi distribution. In this case the model non-equilibrium distribution function is a solution of the quantum kinetic equation linearized with respect to the electric field.…”

Section: Quantum Kinetic Approach To Mobility Calculationsmentioning

confidence: 99%

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Kovalenko,

Kozlovskiy,

Sharan

et al. 2024

J. Phys.: Condens. Matter

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Analytical expressions for the low-field mobility of charge carrier gases with three-(3D), two-(2D) and one-(1D) dimensionalities are obtained. Multi-ion ionized impurities scattering, acoustic and polar optic phonons are considered as scattering mechanisms. The calculated values of mobility are compared to known experimental data for bulk (3D) n-and p-type wurtzite, n-type zinc-blende GaN crystals and low dimensional (2D and 1D) ternary GaAlN compounds. The resulting analytical expressions give the dependences of mobility on dimensionality of charge carrier gas, its density, effective mass, temperature and confining dimensions. A comparison of the experimental and calculated temperature dependences of the mobility in bulk GaN crystals (3D) and in AlGaN/GaN nanowires (1D) shows that the mobility at T > 100 K is determined by the scattering of charge carriers by polar optical phonons with an energy of 91.2 meV. The temperature dependences of mobility in Al0.25Ga0.75N/GaN heterostructures (2D) at T > 100 K are in consistent with experiment for electron scattering by polar optical phonons with a noticeably higher energy of 160 meV. We associate this fact with the heterointerface, which according to well-known theoretical studies can change both the strength of electron polar optical phonons scattering and the energy of the phonons.

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Section: Quantum Kinetic Approach To Mobility Calculationsmentioning

confidence: 99%

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Kovalenko,

Kozlovskiy,

Sharan

et al. 2024

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…To compute the charged carrier mobility we will use the quantum kinetic approach that is based on the one-particle density matrix and the model non-equilibrium distribution function in form of the shifted Fermi distribution [16][17][18][19].…”

Section: Mobility: Quantum Kinetic Approachmentioning

confidence: 99%

“…For isotropic effective mass (1) the kinetic tensor degenerates into a scalar form λ (D) . In the low-field limit the inverse mobility of carriers in vth sub band with dimensionality D for scattering by plasmons can be written as [16][17][18][19]…”

Section: Mobility: Quantum Kinetic Approachmentioning

confidence: 99%

“…The scattering process of charged carriers in the framework of the quantumkinetic approach is described by the correlator of the scattering potential φ 2 (D) ω,⃗ q . Correlator is related with probability transition W( ⃗ k, ⃗ k ′ ) D by the following relation [16]…”

Section: Correlators Of Scattering Potentialmentioning

confidence: 99%

“…The correlator for the scattering of charged carriers by bulk plasmons can be found using the fluctuation-dissipation theorem. The fluctuation-dissipation theorem states that in thermal equilibrium correlator of scattering potential δφ 2 (D) ω,⃗ q is connected with the linear response function ε(ω,⃗ q) (D) in the following way [16,31,32]…”

Section: Correlators Of Scattering Potentialmentioning

confidence: 99%

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Bulk plasmon-limited mobility in semiconductors: from bulk to nanowires

Kovalenko,

Kozlovskiy,

Sharan

et al. 2023

J. Phys.: Condens. Matter

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Analytical expressions are obtained for the low-field mobility in semiconductors for scattering of three-dimensional (3D), two-dimensional (2D), and one-dimensional (1D) charged carriers by bulk plasmons. The consideration is based on the quantum kinetic equation and model distribution function in form of a shifted Fermi distribution and includes calculations of the dielectric function of 3D, 2D and 1D carriers in the random phase approximation. The resulting analytical expressions give dependences of the plasmon limited mobility on the dimensionality of charge carrier system, their density, effective mass, temperature and confining dimensions. The plasmon limited mobility decreases as the dimensionality of the electron gas D decreases. The physical reason for this is an increase in the absolute value of the cutoff vector with a decrease in D. Comparison of our calculations with known experimental data shows that relative contribution of the electron–plasmon scattering to total mobility reaches a maximum in the temperature range 10–100 K and can be a few percent in bulk crystals, ten of percent in quantum wells, and is close to the experimental values in nanowires. A noticeable effect of the scattering 3D, 2D and 1D electrons by bulk plasmons on mobility is expected in semiconductors with a sufficiently high mobility of more than 105 cm2 V−1 s.

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The influence of electromagnetic waves and laser fields on conductivity tensor for the case of electron - optical phonon scattering in quantum wells with a parabolic potential

Ngoc

2021

J. Phys.: Conf. Ser.

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This paper studies the influence of electromagnetic waves and laser fields on conductivity tensor with the case of electron - optical phonon scattering in quantum wells. Because electrons are confined in the quantum well in one direction, the conductivity tensor in the quantum well is different from the conductivity tensor in the bulk semiconductor. The carrier system in a quantum well is located in an electromagnetic wave field and a laser field. Using quantum kinetic equation for electrons in quantum wells in the presence of an electromagnetic wave and a laser field, from the quantum kinetic equation it is possible to calculate the conductivity tensor. The conductivity tensor expression is a function of the electromagnetic wave frequency, laser field frequency and quantum well characteristic parameters. Survey and plot the dependence of conductivity tensor on electromagnetic wave frequency, laser field frequency, laser field amplitude with GaAs / GaAsAl quantum well case.

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Kinetics of a quasi-one-dimensional electron gas in a transverse magnetic field. I. Arrays of quantum wires

Cited by 5 publications

References 10 publications

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Bulk plasmon-limited mobility in semiconductors: from bulk to nanowires

The influence of electromagnetic waves and laser fields on conductivity tensor for the case of electron - optical phonon scattering in quantum wells with a parabolic potential

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