Kinetics of copper drift in low-κ polymer interlevel dielectrics

Loke, Alvin L. S.; Wetzel, J. T.; Townsend, P. H.; Tanabe, Tsuneaki; Vrtis, Raymond N.; Zussman, Melvin P.; Kumar, Devendra; Ryu, Chunghyun; Wong, S.S.

doi:10.1109/16.796294

Cited by 137 publications

(80 citation statements)

References 20 publications

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“…Studies of ionic drift of metal into organic layers have demonstrated that aluminum can penetrate deep into organic layers. [15,[19][20][21] However, these studies are based in metal gates biased positively, whereas in this work the aluminum is negatively biased and diffuses towards the anode. Also, the diffusion of metallic aluminum across the multilayer should induce an increase in current due to the enhanced field.…”

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confidence: 97%

Cathodic and Anodic Material Diffusion in Polymer/Semiconductor‐Nanocrystal Composite Devices

et al. 2007

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In the present day, the information technologies and telecommunications sector continually increase their demand for low cost, low power consumption, high performance electroluminescent devices for display applications. Furthermore, general lighting applications, such as white light and large array colour displays, would also benefit from an increase in the overall efficiency. Several technologies are being investigated to fulfill these needs, such as organic light emitting diodes (OLED), polymeric light emitting diodes (PLED) and field effect emission devices. A new and promising technology is light emitting devices (LEDs) based on nanostructured materials. With organic LEDs (OLEDs) already making an impact on the market in an increasingly large number of applications, hybrid technologies based on organic/inorganic nano-composites are a potential the next step. The incorporation of highefficiency fluorescent semiconductor nanoparticles has been shown to have a beneficial effect on device performance, [1] modify the colour output from the device [2] and provide a simplified route to generation of LED type devices.[3]Fluorescent semiconductor crystallites offer a high spectral purity and excellent luminescence quantum efficiency. These properties stem from the confinement of the carriers within the nanocrystals.[4] However, this confinement also reduces the carrier transport capabilities of the nanocrystals. [5,6] Carrier transport is reduced further when the nanocrystals are embedded in a polymer matrix.[3] Therefore, most devices incorporating semi-conductor nanocrystals work at fields in the order of 10 7 V m -1 or higher. The implications of high applied fields in device degradation have been investigated by various groups in other structures where similar values of field are applied, particularly in organic LEDs (OLEDs). Gao et al. [7] have described damage in hybrid polymer/nanocrystal devices caused by the current-induced oxidation of the aluminum cathode. In the case of OLEDs, the formation of dark spots has been related to the localized degradation of metallic cathodes, caused by electromigration at high operational fields. [8,9] Furthermore, Gautier et al. [10] found that field-induced damage on ITO electrodes can lead to device failure. Here, electrode diffusion-related degradation mechanisms in nanoparticles/polymer composites LEDs have been studied. The structure used for this purpose has been described in detail elsewhere. [3,11] Briefly, a composite multilayer made of a dielectric polymer (poly-diallyl-dimethyl-ammonium, PDDA) and CdTe nanoparticles was sandwiched between an aluminum cathode and an ITO anode. The multilayer was deposited through a layer-by-layer process carried out in air.The thicknesses of the different materials are 35 nm, 220 nm and 130 nm for aluminum, multilayer and ITO, respectively. Each substrate had up to 6 identical independently addressable devices with an active area of 4 mm 2 (Fig. 1). Four such devices were biased at 4.0 V for 15 s, two under moderate vacuum (10 -5 mba...

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confidence: 97%

Cathodic and Anodic Material Diffusion in Polymer/Semiconductor‐Nanocrystal Composite Devices

et al. 2007

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“…The low-k ILD also provides some mechanical support to metal lines during downstream processing of multiple metal layers and packaging. The low-k DB/CCL/ES, however, serves these and many other additional integrated functionalities such as: preventing Cu out-diffusion into overlying metal layers, 36,37,[72][73][74][75][76] preventing in-diffusion of moisture [77][78][79] and other aqueous cleaning chemicals [80][81][82][83] that can corrode lower metal and ILD layers (see Figure 2), passivating the top surface of the Cu line to reduce/prevent electromigration, [84][85][86][87][88] halting/stopping the trench or via ILD etch to prevent over etching into the underlying metal layer and to facilitate unlanded vias (see Figure 3), 89,90 and prohibiting resist poisoning during next layer metal patterning (see Figure 2). 91,92 As these functionality requirements all relate to the material properties of the DB/CCL/ES, we briefly outline and review the basic electrical, mechanical, thermal and optical material property requirements for these layers in a general nano-electronic metal interconnect.…”

Section: Low-k Db/ccl/es Integration Requirementsmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…In the past, C-V and leakage current measurements have often been utilized to study the penetration kinetics under a common assumption that the metal ions would pile up at the dielectric/Si interface once they drift into the dielectric. 6,7 However, this assumption is not always consistent with the published metal distribution results. 8,9 In this paper, we present a study of the kinetics of Ta ion penetration in porous low-k dielectrics.…”

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confidence: 63%

Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

Wang

et al. 2010

Applied Physics Letters

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It is known that Ta, a popular diffusion barrier material, can itself penetrate into low-k dielectrics under bias-temperature stress. In this work, we derived a model which directly correlates the diffusivity of Ta ions to the rate of flatband voltage shift (FBS) of the Ta/methyl silsesquixane (MSQ)/Si capacitors. From our experimentally measured constant FBS rate, the Ta diffusivity and activation energy were determined. It appears that an increase in the porosity of MSQ film enhances the Ta diffusivity but does not affect the associated activation energy. This suggests the Ta ion diffusion is mainly through interconnected pore surfaces.

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Kinetics of copper drift in low-κ polymer interlevel dielectrics

Cited by 137 publications

References 20 publications

Cathodic and Anodic Material Diffusion in Polymer/Semiconductor‐Nanocrystal Composite Devices

Cathodic and Anodic Material Diffusion in Polymer/Semiconductor‐Nanocrystal Composite Devices

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

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