2019
DOI: 10.1016/j.mssp.2019.02.015
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Kinetics of evaporation under vacuum in preparation of solar-grade silicon by electron beam melting

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Cited by 9 publications
(1 citation statement)
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“…Generally, evaporation loss of silicon may occur under vacuum at a high temperature and is positively interrelated with temperature 33,34 . In the present work, the silicothermic reductions were performed at 900°C-1200°C under Ar atmosphere, the equilibrium vapor pressure of silicon would be extremely low (10 −11 -10 −7 kPa), according to the following relationship (6).…”
Section: Resultsmentioning
confidence: 99%
“…Generally, evaporation loss of silicon may occur under vacuum at a high temperature and is positively interrelated with temperature 33,34 . In the present work, the silicothermic reductions were performed at 900°C-1200°C under Ar atmosphere, the equilibrium vapor pressure of silicon would be extremely low (10 −11 -10 −7 kPa), according to the following relationship (6).…”
Section: Resultsmentioning
confidence: 99%