Kinetics of GaAs growth by low pressure MO-CVD

Heinecke, H.; Veuhoff, E.; Pütz, Norbert; Heyen, M.; Balk, P.

doi:10.1007/bf02657928

Cited by 84 publications

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References 11 publications

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“…8 The flat growth rate indicates that the growth rate is limited by mass transport, which is predicted from the simple boundary layer model. 9 Therefore, the growth rate below 650 Pa shown in Fig. 1 is interpreted as the same mass transport limited growth as Refs.…”

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Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Kachi

1994

Applied Physics Letters

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Published by the AIP Publishing Articles you may be interested inTensilestrained GaAsP/AlGaAs quantum wells grown by lowpressure metalorganic vapor phase epitaxy Heteroepitaxial growth of InP on a GaAs substrate by lowpressure metalorganic vapor phase epitaxy Appl. Phys. Lett. 53, 397 (1988); 10.1063/1.99890 Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures Appl. Phys. Lett. 47, 821 (1985); 10.1063/1.95995 Incorporation of Al and Ga in AlGaAs grown by lowpressure triethyl gallium metalorganic vaporphase epitaxy

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“…The ratio of the growth rates between them could be explained by the boundary layer model. 9 According to this model, the growth rate is proportional to P Ϫ1/2 , where P is total pressure. On the other hand, the surface morphology suggests the presence of the parasitic gas phase reactions.…”

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confidence: 99%

Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Kachi

1994

Applied Physics Letters

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“…Low pressure is helpful to the uniformity of the target product. 2D semiconductor thin films prepared by MOCVD are generally carried out under low pressure. − …”

Section: Process and Parameters Of The Cvd System Of Growing 2dmsmentioning

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Substrates in the Synthesis of Two-Dimensional Materials via Chemical Vapor Deposition

Qin

Hossain

et al. 2020

Chem. Mater.

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Two-dimensional materials (2DMs) with excellent mechanical, thermal, optical, and catalytic properties have attracted a great deal of attention in recent years. Chemical vapor deposition (CVD) is an important method to realize the synthesis of high-quality 2DMs. In the growth of 2DMs through the CVD method, the substrates play an important role and can greatly affect the lateral size, composition, thickness, orientation, and crystal quality of 2DMs. In this review, we first introduce the growth mechanism and the key parameters in the CVD system for the synthesis of 2DMs. Then, the unique physical and chemical properties, advantages, and disadvantages of various substrates used in the CVD technique are summarized. Finally, the opportunities and challenges about the use of the substrate in the CVD process in the future are discussed.

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“…Gas-phase reactions are of course a problem. However, the increasing use of low-pressure MOVPE [17] , localised substrate heating (cold wall reactors) and atomic layer epitaxy (ALE) [18], suggests that although gas phase reactions occur, they are not prerequisite for the production of high quality materials. This should not of course detract from the problem of detecting gas-phase species since some of these species may arise via specific surface reactions yet may be difficult to detect on the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM

et al. 1991

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A now established method of studying reaction pathways in GaAs growth is via the use of surface science and related techniques. This paper sets out to review progress made to date via the use of such techniques in terms of the two primary aims of any mechanistic investigation, the identification of reaction intermediates and the measurement of kinetic processes. A comparison is made between trimethylgallium (TMGa) and triethylgallium W G a ) in terms of their behaviour upon adsorption at GaAs (100) surfaces. Both metallorganics adsorb readily at 300 K in a manner which depends only slightly upon the As-coverage of the substrate surface, indicating that there can be only small barriers to adsorption although clear differences in the subsequent chemistry are observed for As-rich and Garich GaAs (100) surfaces, with more rapid uptake at the As-rich surface and the the spontaneous loss of one alkyl unit (i.e. C1 for TMGa and C 2 for TEGa). For TMGa, some evidence of multilayer formation at 300 K is presented. Triethylgallium adsorption and thermal decomposition on GaAs (100) surfaces under high vacuum conditions results in clean, intramolecular surface chemical pathways involving intermediates in which the ethyl groups remain intact. For trimethylgallium, the evidence suggests that adsorption leaves the methyl groups intact yet subsequent thermal decomposition does not occur cleanly in the absence of a source of surface hydrogen, although methyl radical recombination is clearly identified as a possible alternative route to the loss of surface carbon. Reflection IR spectroscopy has been used for the first time to study TMGa adsorption on GaAs (100) at 300 K and has produced vibrational data that are shown to agree with EELS data for the adsorption of TMGa on Si surfaces, also implying that the methyl groups remain intact. As a source of surface hydrogen, arsine adsorption and reaction is shown to lead to a surface subhydride phase represented as ASH,, which is shown to be consistent with the concept of stabilisation of GaAs (100) surfaces at high temperatures via an arsine (and not arsenic) overpressure. Finally, recent data obtained using the non-linear optical surface diagnostic technique of second harmonic generation are reported for the interaction of trimethylgallium with GaAs (100) surfaces at 300 K, which are discussed in the light of the available surface science data.Article published online by EDP Sciences and available at http://dx

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Kinetics of GaAs growth by low pressure MO-CVD

Cited by 84 publications

References 11 publications

Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Substrates in the Synthesis of Two-Dimensional Materials via Chemical Vapor Deposition

SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM

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