Kinetics of gas mediated electron beam induced etching

Randolph, Steven; Toth, Milos; Cullen, Jared; Chandler, Clive; Lobo, Charlene

doi:10.1063/1.3662928

Cited by 24 publications

(31 citation statements)

References 29 publications

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“…Electron-beam-induced chemical etching is fundamentally different from knock-on damage as it is not directly caused by the electrons, but by radicals that are created from residual gas molecules that are in the microscope vacuum when those get adsorbed on the sample surface 21,22 . For modeling beam-induced etching processes, the adsorption of the gas onto the surface, desorption from it, dissociation and diffusion on the surface all have to be considered 23 .…”

Section: Resultsmentioning

confidence: 99%

Scanning transmission electron microscopy under controlled low-pressure atmospheres

et al. 2019

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Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10 −7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we describe experiments carried out in a modified scanning TEM (STEM) instrument, based on the Nion UltraSTEM 100. In this instrument, the base pressure at the sample is around 2 × 10 −10 mbar, and can be varied up to 10 −6 mbar through introduction of gases directly into the objective area while maintaining atomic resolution imaging conditions. We show that air leaked into the microscope column during the experiment is efficient in cleaning graphene samples from contamination, but ineffective in damaging the pristine lattice. Our experiments also show that exposure to O 2 and H 2 O lead to a similar result, oxygen providing an etching effect nearly twice as efficient as water, presumably due to the two O atoms per molecule. H 2 and N 2 environments have no influence on etching. These results show that the residual gas environment in typical TEM instruments can have a large influence on the observations, and show that chemical etching of carbon-based structures can be effectively carried out with oxygen. arXiv:1811.04266v3 [cond-mat.mes-hall]

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Section: Resultsmentioning

confidence: 99%

Scanning transmission electron microscopy under controlled low-pressure atmospheres

et al. 2019

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“…Several precursor-specific approaches were reported in the literature: the fundamental interactions between the beam and adsorbate in pulsed FEBID are discussed in [17], taking W(CO) 6 as a gas precursor. Experimental etch shapes using XeF 2 as a precursor gas have been correlated with the process parameters in [18,19]. A transition between simultaneous etching and deposition of the contamination deposit was discussed in [20].…”

Section: Continuum Modelmentioning

confidence: 99%

Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

et al. 2014

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In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state.

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“…Etch pit conductance can be the dominant, etch-rate-limiting process when fabricating high aspect ratio pits. It causes the etch rate to decrease as the etch pit grows during EBIE, giving rise to a characteristic, sublinear dependence of etch pit depth on electron beam processing time [55]. -The behavior of etch reaction products (α) at the substrate surface [58].…”

Section: Mechanismsmentioning

confidence: 99%

“…The above continuum models of EBIE [16,23,54,55,58,69] and analogous (continuum and Monte Carlo) models of EBID have been used to simulate the timeevolution of the geometries (and in some cases the composition [53]) of structures fabricated by these techniques. The key limitations of existing models are that: (i) the model input parameters are often not known for precursor-substrate combinations of interest, (ii) changes in sample geometry caused by EBIE (or EBID) and their consequences for the electron flux profile, f (x, y), have not been modeled realistically over large areas and for long processing times, and (iii) all of the individual effects listed above have thus far been studied in isolation, and are yet to be consolidated into a generic, predictive model of etching and deposition.…”

Section: Mechanismsmentioning

confidence: 99%

Advances in gas-mediated electron beam-induced etching and related material processing techniques

Toth

2014

Appl. Phys. A

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Electron beam induced etching (EBIE) has traditionally been used for top-down, direct-write, chemical dry etching and iterative editing of materials. The present article reviews recent advances in EBIE modeling and emerging applications, with an emphasis on use cases in which the approaches that have conventionally been used to realize EBIE are instead used for material analysis, surface functionalization, or bottom-up growth of nanostructured materials. Such applications are used to highlight the shortcomings of existing quantitative EBIE models, and to identify physico-chemical phenomena that must be accounted for in order to enable full exploitation and predictive modeling of EBIE and related electron beam fabrication techniques.

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Kinetics of gas mediated electron beam induced etching

Cited by 24 publications

References 29 publications

Scanning transmission electron microscopy under controlled low-pressure atmospheres

Scanning transmission electron microscopy under controlled low-pressure atmospheres

Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

Advances in gas-mediated electron beam-induced etching and related material processing techniques

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