“…At present, the hyperdoping of Si ( Figure 1 ) could be achieved by ion implantation and laser processing [ 4 , 5 ], enabling the management of impurity concentration and distribution. The main impurities are nanoparticles of Er, Ag, Fe, Ti, Ni, Zn [ 1 ], while hyperdoping by gold (Au) nanoparticles [ 6 , 7 , 8 ] is less understood exhibiting high impurity mobility in a Si matrix [ 9 ]. In the system, Au-Si bonding in the Si matrix is considerably weakened, supporting the diffusion of Si atoms through a gold overlayer and room-temperature elemental mixing in a solid solution [ 10 ].…”