Kinetics of ion-beam damage in lithium niobate

Abstract

The damage kinetics induced by irradiation with a diversity of swift ions ͑O at 5 MeV; F at 5.1 MeV; Si at 5, 7.5, and 41 MeV; and Cl at 11 and 46 MeV͒ has been investigated in the range of 10 12-10 15 at./ cm 2. It covers from the initial stage where single damage tracks are isolated and well separated, up to the stage where a full amorphous layer is produced. The damage is characterized by the areal fraction of disorder derived from the Rutherford backscattering/ channeling spectra. The data approximately fit an abrupt Avrami-type dependence with fluence. The fluence value at which 50% of the sample surface becomes disordered shows a clear increasing trend with the electronic stopping power of the ion. The trend is consistent with Monte Carlo simulations based on a recent model for defect creation. Moreover, the quantitative agreement for the defect generation rate appears also reasonable.

Kinetics of amorphization induced by swift heavy ions in α-quartz

“…4 we plot the dependence of the Avrami parameters on stopping power S e ; the model's parameters obtained from the fit are also shown in Table 2. The dependence is in accordance with that obtained for other dielectric materials [28][29][30] and confirms a general trend: n > 1 for stopping powers below threshold and decreases down to an asymptotic value, n = l, for high enough stopping powers (S e > S th ) [30]. In other words, one should remark that the exponent n remains above 1 even for stopping powers somewhat higher than the threshold value.…”

“…The disorder induced by the irradiation was measured by RBS channeling (RBS/C), with helium at 3.035 MeV [29,40]. Some typical RBS/C spectra, obtained from the samples irradiated with Cl +3 at 10 MeV, are illustrated in Fig.…”

“…As for the amorphization kinetics in the electronic excitation regime, it is generally accepted that for low-enough stopping powers it is sigmoidal (Avrami-type), with a null or very small initial slope [27][28][29][30][31]. When the stopping powers are increased above the threshold value for track generation, then the Avrami kinetics turns into a Poisson behavior.…”

Femtosecond laser and swift-ion damage in lithium niobate: A comparative analysis

“…The amorphous fraction has been assessed by RBS/C channeling experiments. 7,33 One sees that in the cases of O and F, a certain prior or incubation fluence ⌽ is required to start full amorphization in comparison with Si ͑7.5 MeV/nm͒ where it starts at a much smaller fluence ͑in this case, ⌽ = ⌽ 0 is the overlapping fluence͒. The occurrence of an incubation fluence is also inferred from optical ͑dark-mode͒ data obtained for higher fluences, where a full homogeneous amorphous layer is induced.…”

Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review

“…In this respect, it has been shown that a controlled damage can be generated by selecting the type of ion and its mass, energy and fluence, obtaining a micro-processing of crystals with a degree of accuracy, flexibility and efficiency well beyond the current state of the art. The optical waveguides produced with this method are both an end in itself (Caballero et al, 2005;Olivares et al, 2005bOlivares et al, , 2007cGarcía-Navarro et al, 2006;Manzano et al, 2010) and a mean that allows the precise study of several fundamental aspects of the generation and accumulation of electronic damage García-Navarro et al, 2007;Rivera et al, 2010a;García et al, 2011).…”