Kinetics of Metal-Rich PA Molecular Beam Epitaxy of AlGaN Heterostructures for Mid-UV Photonics

Jmerik, Valentin; Нечаев, Д. В.; Иванов, С. В.

doi:10.1016/b978-0-12-812136-8.00008-6

Cited by 20 publications

(30 citation statements)

References 180 publications

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“…To understand the growth of GaN/AlN SLs under metal-rich conditions using submonolayer digital PA MBE, we analyzed the desorption kinetics of both Al and Ga atoms using desorption rates equal to zero for the former and 0.22 ML/s for the latter at a substrate temperature of 690 °C, as it has been determined in [ 17 ]. The Al-rich conditions used for the growth of AlN layers to precisely control their thickness using a calibrated flux of N 2 * led to the accumulation of Al adatoms due to the lack of their desorption.…”

Section: Resultsmentioning

confidence: 99%

“…The strongly Ga-enriched growth conditions of the GaN layers led to the very rapid (<2 s) formation of a Ga-bilayer on the surface of these layers, and then excess Ga adatoms accumulated in small nanoclusters, as usually happens in the conventional metal-modulated epitaxy of binary III-Nitrides [ 17 , 28 , 29 ]. It can be assumed that the Ga nanoclusters, due to the low Ga-desorption rate

~0.2 ML/s, supply sufficient Ga adatoms to form a Ga-bilayer on the surface of Al layers throughout their entire growth.…”

Section: Resultsmentioning

confidence: 99%

“…The above estimates were experimentally confirmed by in situ optical observation of the Ga adlayers on the surface of SLs. For this purpose, we used the effect of decreasing the readouts of the IR-pyrometer by several degrees (~5–7 °C) when a Ga-bilayer appears on the surface, as it has been described by us in [ 17 ]. Figure 1 a shows the temporal evolution of the IR-pyrometer readouts during the growth of 42 × 6 × {(GaN) 8 /(AlN) 8 } SL with periodic ( K = 42; L = 6) 60-s anneals at a constant power of the substrate heater and closed shutters of all effusion cells and the N 2 * -source.…”

Section: Resultsmentioning

confidence: 99%

“…Res. Ltd., Oxfordshire, UK), as described in detail in [ 17 ]. At first, the growth of AlN templates on annealed and nitridated c -sapphire substrates was initiated using migration-enhanced epitaxy of 65-nm-thick nucleation layers at a substrate temperature of 780 °C.…”

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

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Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra

et al. 2021

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We report the results of experimental and theoretical studies of phonon modes in GaN/AlN superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital plasma-assisted molecular-beam epitaxy, which have a great potential for use in quantum and stress engineering. Using detailed group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals is established. Ab initio calculations in the framework of the density functional theory, aimed at studying the phonon states, are performed for SLs with both equal and unequal layer thicknesses. The frequencies of the vibrational modes are calculated, and atomic displacement patterns are obtained. Raman spectra are calculated and compared with the experimental ones. The results of the ab initio calculations are in good agreement with the experimental Raman spectra and the results of the group-theoretical analysis. As a result of comprehensive studies, the correlations between the parameters of acoustic and optical phonons and the structure of SLs are obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy. The results obtained can be used to optimize the growth technologies aimed to form structurally perfect short-period GaN/AlN SLs.

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Section: Resultsmentioning

confidence: 99%

~0.2 ML/s, supply sufficient Ga adatoms to form a Ga-bilayer on the surface of Al layers throughout their entire growth.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

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Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra

et al. 2021

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“…Два темплейта AlN были выращены на подложках c-Al 2 O 3 методом плазменно-активированной молекулярно-пучковой эпитаксии с использованием установки Compact 21T (Riber) [6]. Зародышевые слои толщиной ∼ 65 nm были выращены в режиме импульсной эпитак-сии с повышенной миграцией адатомов [7] при температуре подложки 770 • C, которая контролировалась ИК-пирометром.…”

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Повышение эффективности фильтрации прорастающих дислокаций в темплейтах AlN/c-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- с фасетированной морфологией поверхности во время их роста методом молекулярно-пучковой эпитаксии

Мясоедов¹,

Нечаев²,

Ратников³

et al. 2020

Письма В Журнал Технической Физики

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The results of transmission electron microscopy study and X-ray diffraction analysis of AlN/c Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy are presented. It is shown that AlN buffer layers with faceted surface morphology provide a much higher threading dislocations density reduction then with smooth layers. The filtering action of ultrathin GaN insertions is confirmed.

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Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

Mokutani

Deura

Mouri

et al. 2023

Physica Status Solidi (b)

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GaN/AlN superlattices consisting of few‐monolayer GaN wells have attracted considerable attention for use in deep‐ultraviolet (DUV) light‐emitting devices. To avoid the formation of droplets and AlGaN interface layers, precise growth control is essential for fabricating superlattices with flat and abrupt interfaces. Herein, GaN/AlN superlattice structures are grown on face‐to‐face‐annealed sputter‐deposited AlN (FFA Sp‐AlN) template substrates using radio‐frequency plasma‐excited molecular beam epitaxy (RF‐MBE) utilizing in situ reflection high‐energy electron diffraction (RHEED) monitoring. Both AlN and GaN are grown under metal‐rich conditions, and subsequently, the droplets are eliminated by droplet elimination by radical beam irradiation (DERI) method for AlN and by growth interruption for GaN. Furthermore, the dependence of AlN thickness on the properties of superlattices is investigated. The AlN thickness changes linearly with the supply time of the Al metal; thus, the AlN thickness is easily controllable. A total of 20‐period GaN/AlN superlattices with flat and abrupt interfaces is fabricated, as confirmed using atomic force microscopy and X‐ray diffraction. Cathodoluminescence with a peak wavelength of 230–260 nm at room temperature is obtained from the fabricated superlattices. Moreover, the emission wavelength shifts with an increase in AlN thickness.

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Kinetics of Metal-Rich PA Molecular Beam Epitaxy of AlGaN Heterostructures for Mid-UV Photonics

Cited by 20 publications

References 180 publications

Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra

Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

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