Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Chen, Zengjun; Xu, Yi; Garfunkel, Eric; Feldman, L. C.; Büyüklimanli, Temel; Ou, Wei; Serfass, Jeff; Wan, A.; Dhar, Sarit

doi:10.1016/j.apsusc.2014.08.181

Cited by 23 publications

(14 citation statements)

References 29 publications

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“…The detailed bonding of N at the Si-face SiO 2 /SiC interface and the nitridation kinetics were reported in two separate papers. 2,18 The current results show that N atoms are also primarily bound to Si atoms on both the C-and a-faces of SiC. The N 1s peak binding energy is 397.5 eV on the Si-face, 397.9 eV on the C-face, and 397.7 eV on the a-face.…”

Section: Phosphorus Incorporation and Quantification On Different mentioning

confidence: 68%

“…[14][15][16] Earlier measurements have shown that N accumulates in a narrow layer (<1.5 nm) at the oxide/semiconductor interface 17 with a coverage in the sub-monolayer range. 2,18 Using ultra-high vacuum conditions, an epitaxial interface structure has also been reported. [19][20][21][22] These studies indicate that an interfacial layer is formed consisting primarily of nitrogen bonded to three silicon atoms, tying up some of the Si dangling bonds on the Si face.…”

Section: Introductionmentioning

confidence: 99%

“…1 The most important component in an "all-SiC" power circuit is the 4H-SiC power MOSFET. [2][3][4][5][6][7] Electronic performance of the device is intrinsically related to the quality of the gate oxide-SiC interface. One widely used fabrication process to reduce the interface trap density in SiC technology is a nitric oxide (NO) anneal.…”

Section: Introductionmentioning

confidence: 99%

“…The interface trap density near the conduction band edge (E C À E ¼ 0.2 eV) is about 60% lower than the trap density in the NO passivated case, and the peak mobility of phosphorus passivated 4H-SiC MOSFET is about twice that of the NO passivated device. 3,5,23,24 We examine the etching behavior and chemical bonding of phosphorus at the SiO 2 235303 (2015) that, similar to interfacial nitrogen, 18,25 the interfacial phosphorus present prior to etching remains after an HF etch. We also present the interfacial P coverage on different crystal faces of 4H-SiC and discuss the chemical environment of interface passivating elements.…”

Section: Introductionmentioning

confidence: 99%

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Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Liu

et al. 2015

Journal of Applied Physics

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Phosphorous and nitrogen are electrically active species at the SiO2/SiC interface in SiC MOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Both interfacial P and N are found to be resistant to buffered HF solution etching at the SiO2/SiC(0001) interface while both are completely removed from the SiO2/Si interface. The medium energy ion scattering results of etched phosphosilicate glass/SiC not only provide an accurate coverage but also indicate that both the passivating nitrogen and phosphorus are confined to within 0.5 nm of the interface. Angle resolved photoemission shows that P and N are likely situated in different chemical environments at the interface. We conclude that N is primarily bound to Si atoms at the interface while P is primarily bound to O and possibly to Si or C. Different interface passivating element coverages and bonding configurations on different SiC crystal faces are also discussed. The study provides insights into the mechanisms by which P and N passivate the SiO2/SiC(0001) interface and hence improve the performance of SiC MOSFETs.

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Section: Phosphorus Incorporation and Quantification On Different mentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Liu

et al. 2015

Journal of Applied Physics

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“…Reducing the number of interface traps by introducing extra atoms into the interface is called passivation, and regardless of the source (N or P), it is always required that enough foreign atoms diffuse through the gate oxide and reach the interface. Certainly higher annealing temperature and time duration will help with that; however, due to the very low diffusion coefficient of nitrogen in SiC, nitrogen atoms saturate only within a monolayer deeper into the interface [61], and consequently the mobility value does not increase further, and the peak value typically stays around 40 cm 2 /V s [62]. Phosphorous has a higher saturation density than nitrogen in 4H-SiC, but still, the peak mobility value stays around 80 cm 2 /V s [63] regardless of further increased annealing time durations.…”

Section: Sic/sio 2 Interface Treatmentsmentioning

confidence: 99%

Main Differences in Processing Si and SiC Devices

Li¹,

Jennings²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Due to the different physical properties of Si and SiC, many conventional Si device processing techniques cannot be directly transferred to SiC device fabrication. To deliver high-performance SiC commercial power devices, new techniques quite different from Si industry were developed in past decades for processing device, such as dopant implantation, metal contact, MOS interface, etc. On the other hand, the physics model behind many of these SiC processing technologies is not updated in the same pace that the success of them can still not be fully understood.The activation of dopants in 4H-SiC has been intensively studied, and the efforts are mainly put into two directions, namely, protecting the semiconductor surface morphology while at the same time maximising the active concentration of implanted dopants. Figure 1. Schematic graph showing a typical dopant thermal diffusion process using a gas source. Main Differences in Processing Si and SiC Devices

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