Kinetics of radial growth of III-V nanowires in vapor phase epitaxy

Abstract

A model is proposed for the radial growth of III-V nanowires (NWs) in vapor phase epitaxy on masked substrates, which provides explicitly the NW radius as a function of its length. Analytical solutions are obtained for the NW radius in different stages of growth. A comparison of the model with the data on the growth kinetics of GaAs NWs is presented and a good correlation with the data is demonstrated. Keywords: III-V nanowires, radial growth, vapor phase epitaxy, modeling.