In 0.1 % Mn-added 3 % Si-Fe alloys, the total number of {110} grains increased with increasing bulk sulfur content and with decreasing heating rate. This is contrary to that in Mn-free alloys. During isothermal annealing, the segregation concentration of sulfur for the initial time range was lower in the alloy containing 95 ppm sulfur than that in the other alloy containing 25 ppm sulfur. Also the maximum segregation concentration of sulfur appeared at a later time in the former. Such an annealing texture development and a segregation behavior can be attributed to the MnS precipitation and the subsequent dissolution into the matrix.KEY WORDS: Mn-added 3 % Si-Fe; MnS precipitation; segregation; selective growth; annealing texture.(i.e., isothermal annealing at 1 200°C) under the same vacuum or in the same dry hydrogen and subsequently finalannealed at the temperature for 12 h. All the heat treatments were performed without any MgO coating in a quartz tube with the inner and outer diameters of 29 and 33 mm that is enclosed by a three-zone tube furnace. There are several studies [15][16][17][18][19] reporting surface segregation behaviors of solutes in the 3% Si-Fe alloy strips. Due to the active evaporation of solutes at a higher temperature that attacks the electron gun, most of these studies were performed in-situ below 1 000°C in AES (Auger electron spectroscope). In the present study, the surface segregation behavior of the solutes was, therefore, investigated using an ion-sputtering technique.9) That is, the strips were first annealed, cooled and then placed in AES for the analysis. The primary beam energy was 2 keV and the sputtering rate corresponded to 5.7 nm of SiO 2 /min. AES spectra were obtained every 15 s during ion-sputtering. Differential peak heights of S 150 and Fe 703 eV were used. In each case, the differential maximum peak heights of S 150 eV were mostly observed after ion-sputtering for 45 s and these peaks were chosen as the segregation concentrations accumulated at the free surface during isothermal annealing. One example obtained by such an ion-sputtering technique is shown in Fig. 1. All the differential peak heights of S 150 eV were normalized with the peak height of Fe 703 eV which was obtained after ion sputtering for about 5 min. Here, the carbon and oxygen peaks are mainly due to the air contamination after annealing and are not considered in the analysis. ODFs (orientation distribution functions) for the cold-rolled strips and an etch-pit method for the annealed strips were used for texture analyses. The etchant in the etch-pit method is composed of distilled water 80 mLϩH 2 O 2 20 mLϩthree or four droplets of HCl solution. After etching, the annealed strips were cleaned in 15% nital solution for a short time and subsequently in alcohol before drying. Finally, the number of {110} grains in the specimen dimension of 5 mm in width and 100 mm in length and the deviation angle between the ͗001͘ crystal direction placed on the {110} grains and the rolling direction were measured using a m...