1973
DOI: 10.1016/0021-9517(73)90180-2
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Kinetics of the bimolecular ether formation from alcohols over alumina*1

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Cited by 59 publications
(11 citation statements)
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“…The influence of water on dehydration reactions was shown to be decisive in many previous publications and is often considered as a poison 34 or as an inhibitor of the reaction. 15,25,71,72 Our study suggests that two effects of water can be expected:…”
Section: Discussionmentioning
confidence: 87%
“…The influence of water on dehydration reactions was shown to be decisive in many previous publications and is often considered as a poison 34 or as an inhibitor of the reaction. 15,25,71,72 Our study suggests that two effects of water can be expected:…”
Section: Discussionmentioning
confidence: 87%
“…9a). While the former feature has been assigned to linear (type-I) OH species, the latter one is characteristics for three-fold (type-III) hydroxyls [35][36][37][38][39][40][41][42] which disappear from the surface upon interaction/coordination with adsorbed nitrates and nitrites. Another broad and highly convoluted feature centered at 3512 cm −1 can be attributed to H-bonded surface hydroxyl species [38,39].…”
Section: No X Reduction On Binary and Ternary Oxide Systems Via H 2 (G)mentioning
confidence: 99%
“…The 6-311+G* basis set was used for H, C, O, and Al atoms, and the 6-31G* basis set was used for Si. The reactive site of the TMA-saturated Al 2 O 3 surface was modeled with a −CH 3 group bound to a trivalent Al on a hydroxyl-terminated Si(100)-like Si 15 H 16 cluster (Si 15 H 18 O 2 AlCH 3 ). , The transition state geometries were optimized using the synchronous transit-guided quasi-Newton (QST3) method as implemented in Gaussian 09, and then they were confirmed after optimization to obtain an imaginary vibrational frequency along the reaction coordinate.…”
Section: Methodsmentioning
confidence: 99%
“…In addition to Si technology, the oxidation of the channel layer during the ALD process can be a critical issue for two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based field effect transistors (FETs) because of its atomic thickness. To obtain high-performance 2D FETs, ALD high- k dielectrics have been widely adopted because ALD provides ultrathin films with high density and free of pinholes on the 2D channel layer. However, in previous results, oxidation of the 2D channel layer was observed in ALD oxidants such as H 2 O and O 3 , which considerably degraded device performance. , Furthermore, some previous studies have shown that H 2 O vapor under ambient conditions can degrade the long-term stability of organic–inorganic hybrid-based perovskite solar cells (PSCs) and organic light-emitting diodes (OLEDs) . To impede the degradation of PSCs and OLEDs, an ALD-deposited passivation layer was adopted, and the long-term stability of the PSCs and OLEDs with an ALD passivation layer was improved. However, the exposed H 2 O molecules during the thermal ALD process can cause degradation due to undesirable reactions with PSCs and OLEDs.…”
Section: Introductionmentioning
confidence: 99%