Kinetics of the emission spectrum of an LiF:$F^-_2$ laser

Abstract

It is demonstrated that the mobility and number fluctuations in an n-channel metal oxide semiconductor field effect transistor (n-MOSFET), which has a shallow-doped channel, can be separately measured. The mobility fluctuation becomes the dominant source of noise in the case where a negative gate voltage is applied. This is because carriers are not near the Si/SiO interface. If a positive gate voltage is applied to the MOSFET, carriers exist near the Si/SiO interface, so that noise due to the number fluctuation becomes dominant.

Cavity Ringdown Spectroscopy of the à − X̃ Electronic Transition of the CH3C(O)O2Radical

“…The infrared à 2 A‘−X̃ 2 A‘ ‘ transition has been viewed as an ideal candidate to overcome the aforementioned difficulties. It has been observed for several peroxy radicals in early low resolution modulated absorption experiments and intracavity laser absorption studies . It has a relatively small (σ ≈ 10 -21 −10 -20 cm 2 ) transition , moment, but the cavity ringdown spectroscopy (CRDS) technique has evolved into a powerful tool for spectroscopic observations of weakly absorbing transient species. , Our group has reported application of the CRDS technique to study the à 2 A‘ − X̃ 2 A‘ ‘ transition of peroxy radicals, and sharp, structured spectra for several alkyl peroxy and fluorinated methyl peroxy radicals have been reported. , Recently, a CW version of CRDS has been applied to study alkyl peroxy radical spectroscopy and kinetics …”