Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

Abstract

This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

“…Raman spectroscopy lasers have induced the crystallization of amorphous Si nanomaterials. The laser heats the sample, typically crystallizing below the melting temperature and thus this crystallization method does not deform the nanostructure . Laser‐induced crystallization occurs via random nucleation and growth, which are dependent on both the temperature and the duration of the laser treatment (Figure ).…”

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“…Raman‐Spektroskopie‐Laser haben die Kristallisation von amorphen Si‐Nanomaterialien induziert. Der Laser erhitzt die Probe, die normalerweise unterhalb ihrer Schmelztemperatur kristallisiert, sodass dieses Kristallisationsverfahren nicht die Nanostruktur deformiert . Die laserinduzierte Kristallisation verläuft über zufällige Nukleierung und Wachstum, die sowohl von der Temperatur als auch von der Bestrahlungsdauer abhängen (Abbildung ).…”