Kinetics of the liquid-phase reactive sintering of silicon carbide

Gnesin, G. G.; Raichenko, A. I.

doi:10.1007/bf00791264

Cited by 18 publications

(13 citation statements)

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“…It was shown that the parameter σ/2μ weakly depends on temperature and is about 20 m/s for Si–C system . In this case from (3) one may derive that for Si/C media formed during high‐energy ball milling the t inf is on the order of 10 −7 s. The diffusion coefficient of carbon in the molten silicon is about D ~10 −4 cm 2 /s . The characteristic reaction length in this case is defined by a size of amorphous carbon particle, which is r c ~10 nm.…”

Section: Resultsmentioning

confidence: 94%

Direct Combustion Synthesis of Silicon Carbide Nanopowder from the Elements

et al. 2012

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Direct synthesis of silicon carbide (SiC) nanopowders (size 50–200 nm, BET ~20 m2/g) in Si–C system is conducted in an inert atmosphere (argon) using a self‐propagating high‐temperature synthesis (SHS) approach. A preliminary short‐term (e.g., minutes) high‐energy ball milling (HEBM) of the initial mixture, which involves pure Si and C powders, is used to enhance system reactivity. Two conditions of HEBM with different force fields (17G and 90G) are applied and the results are compared. The influence of HEBM's conditions on the microstructure of mechanically treated mixtures and combustion products is also investigated and discussed. Obtained results suggest that by changing the intensity of mechanical treatment one may prepare a completely amorphous reactive mixture containing carbon and silicon, or gradually change the ratio of (Si/C)–SiC phases and finally produce pure silicon carbide powder during the milling process. The influence of HEBM on the combustibility of the Si/C mixture possesses a critical character: the self‐sustained reaction becomes feasible only after a critical time of ball milling (i.e., 10 min for 90G; 30 min for 17G). Comparison of the microstructures for as‐milled and as‐synthesized powders reveals that for all investigated conditions the morphologies of the as‐milled reactive Si/C media are essentially the same as that for SiC combustion products. The mechanism for direct synthesis of SiC by combustion reaction is also proposed.

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Section: Resultsmentioning

confidence: 94%

Direct Combustion Synthesis of Silicon Carbide Nanopowder from the Elements

et al. 2012

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“…The latter are representative of oxygen 2 and carbon (10), respectively. The value of D is that reported for carbon (11), while D is not known for oxygen. However, the value for carbon is in the lower range of those reported for impurities in silicon…”

Section: Ox 2 + ~Y~ Ox Oymentioning

confidence: 89%

Modeling of Ambient‐Meniscus Melt Interactions Associated with Carbon and Oxygen Transport in EFG of Silicon Ribbon

Kalejs

Chin

1982

J. Electrochem. Soc.

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Impurity transport processes associated with interaction of reactive ambient gases and meniscus melt during growth of silicon ribbon by the edge-defined film-fed growth (EFG) technique have been investigated with the help of numerical solution of mass and momentum transport equations. The transport of oxygen and carbon is examined in detail. It is shown that oxygen transport from meniscus sources can account for the interstitial oxygen observed to be introduced into ribbon grown with CO2 in the meniscus ambient. Growth speed is the process parameter that has the most pronounced influence on ribbon impurity levels when a source or sink for the impurity is present on the meniscus surface. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-12 to IP

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“…[12][13][14][15] Under such conditions, the infiltration rate in a vertical capillary (from Poiseuille's law) is predicted to be [12][13][14][15] Under such conditions, the infiltration rate in a vertical capillary (from Poiseuille's law) is predicted to be…”

Section: Flow Behaviormentioning

confidence: 99%

Reactive alloy melt infiltration for SiC composite matrices: Mechanistic insights

2017

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A comparative study of reactive melt infiltration using Si and Si‐Y alloys is presented to provide insight into the governing processes that control the effectiveness of the melt interaction with a carbonaceous preform and the temperature capability of the SiC matrix for ceramic matrix composites. Through experiments on two substantially different scales of capillaries in porous graphite tubes using Si and Si‐Y alloys, the current study has characterized the phenomena that play a role in the infiltration of the melt and its reaction with the preform. It is shown that (i) the interface reaction controls wetting in both large and small capillaries and the climb rate is enhanced by the presence of Y; (ii) reaction choking occurs at critical throats within the pore network, usually behind the infiltration front; and (iii) different residual silicides can form during reaction and upon cooling. A potential mechanism for SiC growth is described, and the implications for the interplay between SiC growth and infiltration are discussed.

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Kinetics of the liquid-phase reactive sintering of silicon carbide

Cited by 18 publications

References 0 publications

Direct Combustion Synthesis of Silicon Carbide Nanopowder from the Elements

Direct Combustion Synthesis of Silicon Carbide Nanopowder from the Elements

Modeling of Ambient‐Meniscus Melt Interactions Associated with Carbon and Oxygen Transport in EFG of Silicon Ribbon

Reactive alloy melt infiltration for SiC composite matrices: Mechanistic insights

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