1996
DOI: 10.1063/1.363051
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Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering

Abstract: We report the experimental studies of in situ kinetic thermal annealing process by Raman scattering obtained from very short period Si/Ge superlattices grown on two types of vicinal Si(100) substrates. The experimental results show that the samples grown on double-stepped vicinal Si(100) substrates have well-defined in-plane strain in the epilayers and rather perfect interfaces. The samples grown on single-stepped vicinal Si(100), on the other hand, appear to have strain-relaxed and imperfect interfaces. The f… Show more

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