Kinetics of triode mode reactive ion etching of Si(100) wafers by chlorine plasmas: temperature and dc self-bias effects

Liu, Y.; Flowers, M. C.

doi:10.1016/0042-207x(91)90133-4

Cited by 3 publications

(2 citation statements)

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“…This may be correlated to the lower melting and boiling points of niobium halides than corresponding tantalum compounds. 17 From these results, it is reasonable to expect that the etch rate of solid solution SrBi 2 ͑Ta x Nb 2Ϫx )O 9 films would lie between the rates of SrBi 2 Ta 2 O 9 and SrBi 2 Nb 2 O 9 .…”

Section: ͓S0003-6951͑96͒01504-8͔mentioning

confidence: 99%

“…For a parallel plate reactor, increasing the discharge pressure will cause the decreasing of sheath potential across the cathode 15,16 which thereby reduces the kinetic energy of the bombarding ions. Liu et al 17 studied the dc self-bias ͑sheath͒ potential effect on etching rates in a parallel plate reactor. They found that etching rates were related to the self-bias potential in the following format:…”

Section: ͓S0003-6951͑96͒01504-8͔mentioning

confidence: 99%

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Reactive ion etching of ferroelectric SrBi2TaxNb2−xO9 thin films

Desu

Pan

1996

Applied Physics Letters

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Ferroelectric SrBi2TaxNb2−xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHClFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process.

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Section: ͓S0003-6951͑96͒01504-8͔mentioning

confidence: 99%

Section: ͓S0003-6951͑96͒01504-8͔mentioning

confidence: 99%