The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron-hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and their energy is dependent on the radiation power and wavelength of the light source illuminating the material. The results of research, obtained with a specialized simulator, present the influence of changes in the filling of individual defect centres' levels on changes in conductivity of the test material observed after switching on the photoexcitation. For the purpose of simulations, presented is a versatile model of semiconductor material. It encompasses six point defects that appear in SI 4H-SiC materials the most often. Those defect centres correspond to Z 1/2 recombination centre, deep electron and deep hole traps, nitrogen-related shallow donors of two kinds and a boron-related shallow acceptor. The simulation results can be used to design and determine properties of photoconductive switches. In recent years, there is intensive research being conducted which aims at developing semiconductor materials with new properties that allow to design devices for new system solutions in power electronics. The new material properties are obtained with defect structure engineering, which involves introducing defect centres with certain properties into a semiconductor material. Currently, research is focused on providing materials for a new type of devices which can operate in a broader temperature range and at higher frequencies while withstanding both higher current densities and higher electric fields. An important group of the materials are semi-insulating monocrystals, characterized with resistivities above 10 5 Ω cm, which are intended for use in microelectronics as substrates for new generation of integrated circuits and in electroenergetics as bulk materials for photoconductive semiconductor switches (PCSSes) 1,2. Currently, one of the most widely used materials for the application is semi-insulating silicon carbide (SI SiC) 3. Its properties are desired in electroenergetics for manufacturing hybrid switches 4. Additionally, its wide band gap enables devices based one the semi-insulating silicon carbide to operate in a range of temperatures up to 600 °C. Designing such devices requires an efficient method of investigation of the material electrical properties. One of the most often used method is photo-induced transient spectroscopy (PITS) 5,6. The method is intended for investigating defect structure of semiconductor materials and involves filling defect centres' levels with excess electrons or holes generated during illumination of the test material with a pulse of light and then measuring the transient waveform of photocurrent relaxation induced by thermal emission of charge carriers after turning the photoexcitation off 5,6. As the principle of operation of the photoconductive switches is based on the photoconductivit...