Kondo-assisted switching between three conduction states in capacitively coupled quantum dots

Abstract

We propose a nanoscale device consisting of a double quantum dot with strong intra-and interdot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined statesinsulating, normal conduction, and resonant conduction.

The effect of inter-dot Coulomb interaction on the charge and energy transport properties of a five-terminal system consisting of three Coulomb-coupled quantum dots

“…Also, considering of systems consisting of two or more QDs in close proximity to each other have shown that in addition to the intra-dot Coulomb repulsion, the inter-dot Coulomb interaction plays an important role on transport properties of QDs [32][33][34]. For example, in the [35], the electronic transport properties of a double QD structure which are coupled via a strong inter-dot Coulomb interaction, has investigated and it is shown that the inter-dot Coulomb interaction can strongly affect the current through the QD. Also, the effect of Coulomb interaction on the thermoelectric properties of QDs has been the subject of many work [36][37][38][39].…”