Kondo-like transport and its correlation with the spin-glass phase in perovskite manganites

Zhang, Jincang; Xu, Yan; Cao, Shixun; Cao, Guixin; Zhang, Yufeng; Jing, Chao

doi:10.1103/physrevb.72.054410

Cited by 92 publications

(70 citation statements)

References 27 publications

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“…The low-temperature resistivity minimum and upturn in polycrystalline samples was found to be suppressed by magnetic field and was interpreted in terms of the intergrain spin-polarized tunneling through grain boundaries. [1][2][3] The intergrain tunneling model was experimentally confirmed by Rozenberga and co-workers 1,2 and Xu et al 3 The low-temperature resistivity upturn in intrinsically disordered ͑e.g., magnetic/charge phase separation͒ samples [4][5][6] was attributed to the Kondo-type effect which was previously observed in dilute magnetic alloys. 7 It is noteworthy that Lee et al 8 theoretically pointed out the possible presence of quantum corrections to conductivity ͑QCC͒ in manganite single crystals and thin films.…”

Section: Introductionsupporting

confidence: 59%

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

et al. 2010

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Based on the complexity and difficult understanding on low-temperature resistivity minimum in manganites, the effect of ferroelectric-poling-induced strain on Kondo-type transport behavior was systemically investigated as a function of magnetic field for La 0.7 Ca 0.15 Sr 0.15 MnO 3 manganite thin films grown on ferroelectric 0.67Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.33PbTiO 3 ͑PMN-PT͒ single-crystal substrates. The results show that the lowtemperature resistivity upturn is mainly caused from quantum correction effects driven by electron-electron interaction and inelastic scattering. Whether the PMN-PT substrate is in unpoled or poled state, the temperature where the resistivity shows an upturn near 15 K shifts to a higher temperature under magnetic field. The ferroelectric poling induces a reduction in the in-plane tensile strain and thus the lattice distortion of the film, which suppresses the resistivity upturn. These prove that the local lattice distortion relevant to the strain of the film is one of the main disorders that influence the resistivity upturn. The present results will be meaning to understand the physical mechanism of Kondo-type behavior at low temperature in colossal magnetoresistance manganites.

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Section: Introductionsupporting

confidence: 59%

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

et al. 2010

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“…S2). Kondo effect is observed also in ferromagnetic conducting compounds containing small amounts of spin-glass and/or antiferromagnetic impurities (16). However, the energy scale where the upturn takes place is really high compared with typical Kondo systems.…”

Section: Significancementioning

confidence: 99%

Origin of colossal magnetoresistance in LaMnO ₃ manganite

Baldini

Muramatsu

Sherafati

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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Phase separation is a crucial ingredient of the physics of manganites; however, the role of mixed phases in the development of the colossal magnetoresistance (CMR) phenomenon still needs to be clarified. We report the realization of CMR in a single-valent LaMnO 3 manganite. We found that the insulator-to-metal transition at 32 GPa is well described using the percolation theory. Pressure induces phase separation, and the CMR takes place at the percolation threshold. A large memory effect is observed together with the CMR, suggesting the presence of magnetic clusters. The phase separation scenario is well reproduced, solving a model Hamiltonian. Our results demonstrate in a clean way that phase separation is at the origin of CMR in LaMnO 3 .colossal magnetoresistance | strongly correlated materials | phase separation | high pressure | transport measurements I n hole-doped rare earth manganite compounds, the colossal magnetoresistance (CMR) peaks at a transition from a hightemperature (T) insulating paramagnetic phase to a low-T conducting ferromagnetic phase. The presence of Mn 3+ and Mn 4+ ions together with the site-site double-exchange (DE) mechanism (1) appear to capture the essence of this phenomenon. A plethora of experimental and theoretical investigations have recently suggested that the ground states of manganites are intrinsically inhomogeneous and characterized by the presence of competing phases (2-8) extending over domains at nanoscale/mesoscale. High pressure (P) has a triggering effect for phase separation because either magnetic or structural domains have been observed in compressed manganites (9-12). The role of the nanostructuring and of the interdomain interactions in the CMR phenomenon is still far from being completely understood, and to design materials that incorporate CMR at room temperature (RT) remains a challenge because of the strong interplay among electronic, structural, and magnetic interactions at both atomic and interdomain scales.As an archetypal cooperative Jahn-Teller (JT) system (13) and the parent compound of several important mixed-valence CMR manganite families, LaMnO 3 (LMO) is at the focus of intense investigations. Up to now, the CMR effect has been observed in hole-doped LMO, but not in single-valent LMO. At RT, LMO enters a high conductive phase above 32 GPa showing a "badmetal" behavior (14). Previous Raman spectroscopy study (9) shows the emergence, in compressed LMO, of a phase-separated (PS) state consisting of domains of JT-distorted and undistorted MnO 6 octahedra. The simultaneous presence of an inherent phase separation as well as of a metallization process resembles the conditions under which CMR is observed in doped compounds, and suggests the onset of CMR in compressed LMO. To verify this hypothesis, we have carried out an extensive study of the transport properties of LMO over a wide P-T region (12 < P < 54 GPa and 10 < T < 300 K) and applied magnetic field H, varying from 0 to 8 T. Here, we report the realization of CMR in a narrow pressure range between 3...

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“…Tiwari and Rajeev [13] in polycrystalline sample of La 0.7 A 0.3 MnO 3 (A=Ca, Sr, Ba) and Kumar et al [14] in the thin film of La 0.7 Ca 0.3 MnO 3 , ascribed the upturn of resistivity to the electron-electron interaction together with inelastic scattering processes whereas Rosenberg et al [15] in ceramic sample of La 0.5 Pb 0.5 MnO 3 and Auslender et al [16] in bulk samples of La 0.5 Sr 0.5 MnO 3 attributed the observed upturn in resistivity to the intergranular tunneling of charge carriers across the antiferromagnetically coupled grains. A combined effect of Kondo Scattering, electron-electron interaction and electron-phonon scattering has been proposed for the observed upturn of resistivity of infinite layered manganite [17]. There are few reports [5,8,[18][19][20][21][22][23] on the low temperature studies of resistivity of double layered manganite, however its behaviour is still not well understood.…”

Section: Introductionmentioning

confidence: 97%

Low temperature electrical transport in La2−2xCa1+2xMn2O7 double layered manganite

Gupta

Kumar

Bhalla

et al. 2007

Journal of Alloys and Compounds

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Kondo-like transport and its correlation with the spin-glass phase in perovskite manganites

Cited by 92 publications

References 27 publications

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Origin of colossal magnetoresistance in LaMnO ₃ manganite

Low temperature electrical transport in La2−2xCa1+2xMn2O7 double layered manganite

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Kondo-like transport and its correlation with the spin-glass phase in perovskite manganites

Cited by 92 publications

References 27 publications

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Origin of colossal magnetoresistance in LaMnO 3 manganite

Low temperature electrical transport in La2−2xCa1+2xMn2O7 double layered manganite

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Origin of colossal magnetoresistance in LaMnO ₃ manganite