Kr incorporation in sputtered amorphous Si layers

Abstract

Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Amorphous Si layers were grown by krypton plasma sputter deposition at 310 'C. By pulsation of the substrate potential between 0 and 50 eV, the Kr concentration in the layers could be varied to a maximum of 5.5 at. %. A model which describes trapping of inert gas atoms in the sputtered layer in terms of implantation and trapping, diffusion, growth, resputtering, and gas sputtering is presented. High-resolution electron microscopy, electrode-probe (x-ray) microanalysis, positron annihilation, Raman spectroscopy, Mijssbauer spectroscopy, and bending and hardness measurements were performed on the deposited layers. It turns out that the ion assisted growth Ieads to a strong reduction of open volume defects. The experiments point to the presence of very small Kr agglomerates. From the Mossbauer experiments a lower limit of 250 K for the Debye temperature of the Kr agglomerates is derived. Molecular-dynamic simulations from which the Debye temperatures of Kr mono-, di-, and trimers in amorphous Si can be derived are presented. The simulations indicate the presence of predominantly Kr monomers and dimers. 0 1995 American Institute of Physics.

Tribological and mechanical properties of high power laser surface-treated metallic glasses

“…These are, in turn, widely different to the results obtained for the crystalline material, which is in the region of 18% lower than the amorphous layer. This is in accordance with previous studies on the comparative hardness and elastic modulus of crystalline and amorphous materials [16]. Any slight deviation from this expected difference can be accounted for in the fact that the matrix of the crystalline material has a very fine eutectic structure, which is reflected in the ease with which it forms an amorphous matrix as stated previously.…”

A Mössbauer study of Kr incorporations in sputtered a-Si films

“…An unsatisfactory aspect of the Mössbauer measurements of Greuter et al [1] is the fact that the data did not show any temperature dependence of the recoilless fraction, only fluctuations due to a varying peak-background ratio. We therefore decided to repeat these measurements and to study also the Kr concentration dependence.…”

“…It is therefore of interest to study the incorporation process and the sites of noble-gas atoms in amorphous and crystalline Si. Recently Greuter et al [1,2] reported on a detailed study of 0.5-6 at.% Kr in a-Si films grown by plasma sputter deposition, using high-resolution electron microscopy (HREM), x-ray microanalysis, Rutherford backscattering (RBS), positron beam analysis, Raman spectroscopy, Mössbauer spectroscopy and bending measurements. There is a clear indication that ion-assisted growth leads to a strong reduction of open volume and that krypton resides in small agglomerates.…”

A high-resolution CMOS imaging detector for the search of neutrinoless double β decay in82Se

“…[ Additionally, the detector's imaging capability will allow for the localization of the site of a double β decay candidate within tens of µg's of selenium in a detector module. Following the double β decay of 82 Se, the 82 Kr daughter will remain essentially immobile [39]. Its selective removal and detection by single atom counting [40][41][42] may be possible and may offer an independent confirmation of double β decay.…”