kW-class fiber-coupled diode laser source based on dense spectral multiplexing of an ultra-narrow channel spacing

Zhu, Heyuan; Lin, Xingchen; Zhang, Yawei; Zhang, Jianwei; Wang, Biao; Zhang, Jinlong; Qin, Li; Wu, Hao

doi:10.1364/oe.26.024723

Cited by 13 publications

(2 citation statements)

References 16 publications

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“…Coherent beam combining is difficult to apply for the complex system. Incoherent beam combining technology is the main method to realize high-power lasers [10][11][12][13][14][15]. Spectral beam combining which was proposed by MIT in 2000 is the most promising technology with the advantages of high beam quality (close to that of single emitter) and high outpower [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

Zhao,

Tong,

wei

2023

3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)

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Two 808 nm semiconductor lasers were combined by V-shaped spectral beam combining and locked at 798.8 nm, and 800.5 nm respectively. The outpower power and beam quality in the slow axis were improved significantly. The sum frequency of semiconductor lasers was realized based on the laser source. A laser with an output power of 6.5 W and beam quality of M 2 = 2.2×18.5 was obtained by the spectral beam combining. The M 2 in slow axis was improved by 30% and the combining efficiency was 83%. The 399.9nm sum frequency laser at a power of 18.3mW was obtained and the efficiency of sum frequency generation was 0.28%.

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Section: Introductionmentioning

confidence: 99%

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

Zhao,

Tong,

wei

2023

3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)

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“…However, this method would result in unsatisfactory heat dissipation and degrade the laser lifetime [9]. In 2018, Zhu et al actively selected the desired emitters from the epitaxial wafer to match the Bragg wavelength to avoid the side-modes [10]. While side-modes may continue to occur at other injection currents.…”

Section: Introductionmentioning

confidence: 99%

Spectrum-locked high-power volume Bragg grating external-cavity diode laser

Zhang¹,

Pan²,

Tan³

et al. 2022

Laser Phys. Lett.

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Spectrum-locked high-power diode lasers are extremely sought after in many fields. Here, we establish the volume Bragg grating external-cavity diode laser model and investigate the impact of facet reflectivity on the output spectrum. The simulation results emphasize that optimizing reflectivity can realize better spectrum-locking and side-mode suppression ratio. To prove the feasibility, we built a diode laser array with 20 single emitters. Three different facet reflectivity are prepared, 0.1%, 0.5%, and 0.8%. As a result, the output spectrums of the array are improved obviously with the decrease in reflectivity. In the case of 0.1%, the side-mode is well suppressed under injection current up to 16 A, and the calculated current-spectrum shift is around 0.07 nm A−1. After beam combining and fiber coupling, an output power of 243.4 W and a brightness of about 11.2 MW cm−2-str is attained.

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Narrow-linewidth stable-spectrum diode laser source basing on polarization-separated external cavity feedback technology

Han,

Shan,

Zhang

et al. 2024

Optics Communications

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kW-class fiber-coupled diode laser source based on dense spectral multiplexing of an ultra-narrow channel spacing

Cited by 13 publications

References 16 publications

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

Spectrum-locked high-power volume Bragg grating external-cavity diode laser

Narrow-linewidth stable-spectrum diode laser source basing on polarization-separated external cavity feedback technology

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