L-band erbium-doped fiber amplifier incorporating an inline fiber grating laser

Yamashita, S.; Nishihara, Masato

doi:10.1109/2944.924008

Cited by 31 publications

(17 citation statements)

References 5 publications

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“…In addition, it can lead to significant extra heat dissipation owing to the subsequent multiphonon relaxations 4 I 9=2 3 4 I 11=2 3 4 I 13/2 of the upconverted ion [69]. In the most straightforward model, the upconversion rate is determined by a macroscopic materialdependent parameter W ETU and is proportional to the square of the population density of the Er level from which it occurs [14,15]. The upconversion rate can be represented as follows:…”

Section: Energy Transfer Between Ionsmentioning

confidence: 99%

“…Its broad gain at important lowloss, low-dispersion wavelengths covering the telecom Cand L-bands (1525-1565 nm and 1565-1610 nm, respectively) [2,3], low noise [4], and compatibility with fiber lightwave systems [5,6] make it an excellent fit for signal amplification at various points in such networks. Simultaneously, the optically pumped Er-doped fiber laser (EDFL) [7] has reached a state of maturity, being ideally suited for narrow-linewidth single-frequency [8], highpower [9], multi-frequency [10][11][12], tunable [13][14][15], or short-pulse output [16][17][18]. EDFAs and EDFLs have been utilized in a wide range of applications, including ultra-high bit-rate telecommunications transmission systems [19], frequency measurement [20], spectroscopy [21], sensing [22], and space communications [23].…”

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confidence: 99%

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Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

326

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Energy Transfer Between Ionsmentioning

confidence: 99%

mentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

326

161

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“…4,5 A tuning range of 100 nm within a 1-dB power f latness has been demonstrated in a ring cavity EDFL with low erbium concentration. 5 However, it is shown here that in a ring cavity EDFL with highconcentration erbium-doped f iber (EDF) the power f latness deteriorates significantly over a large tuning range of 100 nm.…”

Section: -3mentioning

confidence: 99%

Concentration-induced nonuniform power in tunable erbium-doped fiber lasers

et al. 2004

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We report, for the first time to our knowledge, the presence of concentration-induced nonuniform power in tunable erbium-doped fiber lasers. A theoretical model is proposed with pair-induced quenching taken into account. We obtain good agreement between numerical and experimental results of a high-concentration erbium-doped fiber ring laser with a large tuning range of over 100 nm. Erbium-doped f iber lasers (EDFLs) have been studied extensively for their potential applications in wavelength-division-multiplexed transmission systems and for performance testing of components. -3Recently, EDFLs with widely tunable ranges covering both the conventional wavelength band (C band) and the long-wavelength band (L band) have been demonstrated to have a low threshold, a high signal-tonoise ratio, and a modest effective linewidth (0.1 -1.0 GHz). 4,5 A tuning range of 100 nm within a 1-dB power f latness has been demonstrated in a ring cavity EDFL with low erbium concentration. 5 However, it is shown here that in a ring cavity EDFL with highconcentration erbium-doped f iber (EDF) the power f latness deteriorates significantly over a large tuning range of 100 nm. This phenomenon, to our knowledge, has not been previously reported. In this Letter we show by theoretical modeling that the nonuniform power in tunable EDFLs is caused mostly by concentration quenching in the highly doped EDF.Concentration quenching has been identified as the main cause of performance degradation in EDFs. 6,7 It has been suggested that, in highly doped fibers, erbium ions tend to cluster in pairs and that a rapid cross-relaxation process, called pair-induced quenching (PIQ), takes place between doubly excited pairs. In this process one of the two ions transfers its energy to the other ion and is then nonradiatively transferred to the ground state ( 4 I 15/2 ) while the other ion is upconverted to the 4 I 9/2 level, where it mostly relaxes rapidly to the metastable level ( 4 I 13/2 ). 6Only approximately 1͞10,000 of the upconverted ions decay radiatively to the ground state, which is sufficiently small and can therefore be neglected in the theoretical model. 6 This process has caused a decrease in the population inversion and hence quantum efficiency, resulting in a reduction of gain in EDF amplif iers and an increase in the threshold of EDFLs. 8 -11 To study the effect of concentration quenching on the performance of tunable EDFLs, we model a tunable erbium-doped f iber ring laser with PIQ taken into account. The supposed laser, as shown in Fig. 1, has both forward and backward pumps that may be of the same or different frequency to meet lasers with different pump configurations. Other components include a tunable narrow bandpass filter, an output coupler, wavelength-division-multiplexed couplers, an optical isolator, a polarization controller, and a length of EDF.It is assumed that all the erbium ions exist as two distinct species: single ions and paired ions. The concentration of the paired erbium ions is denoted as n p 2kn t , where n t is th...

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“…Earlier work by Fukushima et al [2] shows gain flatness and noise performance of the L-band EDFA improved by co-pumping with a conventional 1.48-m high-power laser diode in conjunction with an auxiliary 1.55-1.57-m medium-power laser diode. Work by Yamashita and Nishihara [3] shows that good gain flatness as well as gain clamping can be obtained with L-band EDFA by incorporating an inline fiber grating laser.…”

Section: Introductionmentioning

confidence: 98%