L-band glass-epoxy 5-bit phase shifter module using SW-bank chips and low cost L, C chips

Nakajima, Kensuke; Suematsu, Noriharu; Taniguchi, Eiji; Takeda, H.; Shinbo, T.; Sasaki, Y.; Takagi, Tadashi

doi:10.1109/mwsym.2000.862281

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…5) The MEMS switch device has superior performance in terms of insertion loss, signal distortion, and power consumption to conventional semiconductor switches using p-i-n diodes 6,7) or GaAs field effect transistors (FETs). 8,9) Various kinds of circuit topologies have been applied in MEMS switch base phase shifters so far, for example, switched-line, [10][11][12] loaded-line, 13,14) reflection 15,16) and distributed-transmission-line [17][18][19][20][21] phase shifters. However, these circuit topologies are concerned with higher-frequency operation or multiple-function capability.…”

Section: Introductionmentioning

confidence: 99%

2.5 GHz Low-Insertion-Loss Hybrid Phase Shifters Using Micro-Electro-Mechanical-Systems Switches

Ado¹,

Furutsuka²,

Suzuki³

2010

Jpn. J. Appl. Phys.

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One-bit hybrid phase shifters with two different circuit topologies were developed for 2.5 GHz operation. They were realized by combining micro-electro-mechanical-systems (MEMS) shunt switch chips with delay lines formed on a printed circuit board (PCB). An equivalent circuit model of an assembled switch chip on a PCB with bonding wires was investigated in advance, and it was fully reflected on the phase shifters design. Through this approach, excellent design accuracy was achieved in MEMS hybrid phase shifters. The loaded-line phase shifter exhibited a very low insertion loss of 1.02 dB (maximum) with a 41.3° phase shift. From the switched-line phase shifter, a low insertion loss of 1.82 dB (maximum) was obtained with a 91.3° phase shift.

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