Untitled

Abstract

In this paper, a new technique, namely, the fabrication of NH 3 -nitrided N 2 O-annealed oxides (NNO) under reduced pressure, is presented to attain the desired nitrogen concentrations and profiles that eventually improve the hot-carrier lifetime and high immunity to boron penetration. The proposed NNO dielectrics fabricated at reduced pressure (<550 Torr) showed excellent hot-carrier lifetimes and barrier properties to boron penetration without any adverse effects on the electrical properties and reliability.

SU(3) deconfining phase transition with finite volume corrections due to a confined exterior

“…This should include to study the effect due to a cold surrounding geometry instead of a DLT. Using the always confined [26] spacelike string tension as an additional scale would allow one to tune couplings for spacelike and timelike plaquettes distinctly, so that the space transition from deconfined to confined volumes becomes entirely smooth.…”

“…12 3 5.6905 5.69055 (21) −0.00449 (50) 0.01452 (17) 4 16 3 5.6910 5.69124 (16) −0.00288 (39) 0.00666 (11) 4 20 3 5.6918 5.69175 (12) −0.00168 (30) 0.003547 (73) 4 24 3 5.6920 5.69210 (14) −0.00086 (34) 0.002015 (43) 4 28 3 5.6922 5.69226 (10) −0.00049 (25) 0.001261 (20) 4 32 3 5.6923 5.69215 (07) −0.00075 (19) 0.0008432 (96) 4 36 3 5.6924 5.69236 (07) −0.00026 (19) 0.0005753 (70) 4 40 3 5.6925 5.69252 (05) +0.00012(15)0.0004088(26) …”