Label-free detection of DNA hybridization using transistors based on CVD grown graphene

Chen, Tzu Yin; Loan, Phan Thi Kim; Hsu, Chang Lung; Lee, Yi Hsien; Wang, Jacob Tse-Wei; Wei, Kung Hwa; Lin, C. T.; Li, Lain‐Jong

doi:10.1016/j.bios.2012.07.059

Cited by 194 publications

(132 citation statements)

References 47 publications

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“…Another issue that must be addressed is their high subthreshold swing, typically of several hundreds of millivolts, which impede their sensitivity. A strategy may be to switch from classical OSC to graphene-based materials, e.g., graphene or reduced graphene oxide, which has already been reported [33][34][35][36][37][38][39][40][41][42][43][44][45][46], but this will not be discussed here. Readers who are interested in grapheme-based EGOFETs may report on the review from Yan et al, 2013, which dealt with graphene-based transistors for biological sensors [47].…”

Section: Egofetsmentioning

confidence: 99%

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

2016

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Electrolyte-gated organic field-effect transistors have emerged in the field of biosensors over the last five years, due to their attractive simplicity and high sensitivity to interfacial changes, both on the gate/electrolyte and semiconductor/electrolyte interfaces, where a target-specific bioreceptor can be immobilized. This article reviews the recent literature concerning biosensing with such transistors, gives clues to understanding the basic principles under which electrolyte-gated organic field-effect transistors work, and details the transduction mechanisms that were investigated to convert a receptor/target association into a change in drain current.

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Section: Egofetsmentioning

confidence: 99%

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

2016

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“…Sample in buffer solution was placed in the reservoir, and a gate voltage was applied directly to the top of the buffer solution (27,31,34,37). When the surface charge was changed by strand displacement, the charge built up and the I-V curve shifted to left side and the resistance was increased (27,37,41). Functionalization of the DS probe changed electrical signals of FET (SI Appendix, Fig.…”

Section: Detection Of Strand Displacement On Graphene Fetmentioning

confidence: 99%

“…The source and drain electrodes were applied by silver paste, and silicone rubber was used before the DNA probe functionalization to insulate the electrodes and create a solution reservoir (41). Sample in buffer solution was placed in the reservoir, and a gate voltage was applied directly to the top of the buffer solution (27,31,34,37).…”

Section: Detection Of Strand Displacement On Graphene Fetmentioning

confidence: 99%

Highly specific SNP detection using 2D graphene electronics and DNA strand displacement

Hwang

Landon

Lee

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

117

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Single-nucleotide polymorphisms (SNPs) in a gene sequence are markers for a variety of human diseases. Detection of SNPs with high specificity and sensitivity is essential for effective practical implementation of personalized medicine. Current DNA sequencing, including SNP detection, primarily uses enzyme-based methods or fluorophore-labeled assays that are time-consuming, need laboratory-scale settings, and are expensive. Previously reported electrical charge-based SNP detectors have insufficient specificity and accuracy, limiting their effectiveness. Here, we demonstrate the use of a DNA strand displacement-based probe on a graphene field effect transistor (FET) for high-specificity, single-nucleotide mismatch detection. The single mismatch was detected by measuring strand displacement-induced resistance (and hence current) change and Dirac point shift in a graphene FET. SNP detection in large double-helix DNA strands (e.g., 47 nt) minimize false-positive results. Our electrical sensor-based SNP detection technology, without labeling and without apparent cross-hybridization artifacts, would allow fast, sensitive, and portable SNP detection with single-nucleotide resolution. The technology will have a wide range of applications in digital and implantable biosensors and high-throughput DNA genotyping, with transformative implications for personalized medicine.NA sequencing has opened new windows of opportunities for diagnosis of genetic disease (1), biological informatics (2), forensics (3), and environmental monitoring (4). Discrimination of a single mismatch in a long DNA strand is of significant importance and is essential to detect single nucleotide polymorphism (SNP). SNP is a single-nucleotide mutation in a gene sequence and varies among paired chromosomes, between individuals, and across biological species. SNP mutations can have dramatic influence on the health. They are markers for variety of diseases, including various forms of cancer, genetic disorders (5-7), and are of critical importance for successful practical implementation of the concept of personalized medicine (8). Thus, the development of biosensors detecting SNP mutations with high sensitivity and specificity is essential for effective personalized medicine approaches.Current DNA sequencing, including SNP detection, is achieved primarily by enzyme-based methods, using DNA ligase (9), DNA polymerase (9), and nucleases (10). These methods generate highly accurate genotyping. However, the methods are expensive and time-consuming. One of the common enzyme-free methods to detect SNPs uses hybridization of the target DNA to a probe on a microarray and detects their binding events with fluorescence microscopy/spectroscopy. Hybridization-based methods for SNP detection have several disadvantages, including cross-hybridization between allele-specific probes (11). This limits the detection of a single mismatch in long probe-target hybridization as the longer probes have more frequent cross hybridization. For example, a single mismatch in the center o...

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“…As shown in Figures 1c and 1d, the representative thickness of the transferred films is ~0.97nm, which is slightly thicker than the as-grown monolayer WSe2 on SiO2/Si, 22,24,25 and this could be attributed to residual chemical contamination of the transferred process or the substrate effect. 26 The Raman spectra for the transferred films excited by a 473nm laser are shown in Figure 1e, where two characteristic peaks at 248cm -1 and 259cm -1 are observed.According to the calculated phonon dispersion and experimental studies of monolayer WSe2, the peak at 248cm -1 is assigned to the in-plane vibrational E2g 1 mode. 27-32 However, there are different assignments in the literature for the peak at ~259cm -1 .…”

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confidence: 99%

Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers

et al. 2014

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ABSTRACT:Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10 5 ) and specific detectivity (10 14 Jones), values higher than commercial Si-and InGaAs-based photodetectors; however, the response speed is longer than 5s in ambient. In contrast, the response speed of the high Schottky-contact phototransistors display a fast response time shorter than 23ms, but the photo gain and specific detectivity decrease by several orders of magnitude.Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient. This study demonstrates that the contact plays an important role in TMD 2 phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity. KEYWORDS:Photodetector · Contact effect · Schottky barrier · Tungsten diselenide · 2d materialThe monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) are potentially important building blocks for nanoscale optoelectronics due to their unique optical properties. 1-9Recently, there has been much interest in the molybdenum disulfide (MoS2) Jones. However, the photocurrents for the Pd-contacted devices take more than 5s to saturate in ambient air. In contrast, the high Schottky-barrier WSe2 devices using low work function Ti metal contacts present a much faster response time of <23ms, and better photocurrent linearity as a function of incident optical power. We suggest a qualitative mechanism based on metal/semiconductor junction energy band diagrams to explain these distinctly different phenomena. RESULTS AND DISCUSSIONThe large area WSe2 monolayers were grown on sapphire by the vapour-phase reaction of WO3 and Se powders in a hot-wall CVD chamber as described in our previous work. 22 After growth, the films were transferred to 300nm SiO2/Si substrates. Figure 1a shows the optical 4 image of a ~1×1cm transferred film on SiO2/Si substrate, and Figure 1b is the magnified optical image with no obvious optical contrast difference across the field, indicating that the transferred film was uniform. 23Atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) were used to characterize the number of layers and quality of the transferred films. As shown in Figures 1c and 1d, the representative thickness of the transferred films is ~0.97nm, which is slightly thicker than the as-grown monolayer WSe2 on SiO2/Si, 22,24,25 and this could be attributed to residual chemical contamination of the transferred process or the substrate effect. 26 The Raman spectra for th...

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Label-free detection of DNA hybridization using transistors based on CVD grown graphene

Cited by 194 publications

References 47 publications

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

Highly specific SNP detection using 2D graphene electronics and DNA strand displacement

Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers

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Label-free detection of DNA hybridization using transistors based on CVD grown graphene

Cited by 194 publications

References 47 publications

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

Highly specific SNP detection using 2D graphene electronics and DNA strand displacement

Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

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Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers