Labile Ferroelastic Nanodomains in Bilayered Ferroelectric Thin Films

Anbusathaiah, Varatharajan; Kan, Daisuke; Kartawidjaja, Fransiska Cecilia; Mahjoub, Reza; Arredondo, Miryam; Wicks, Samantha; Takeuchi, Ichiro; Wang, John; Valanoor, Nagarajan

doi:10.1002/adma.200803701

Cited by 62 publications

(73 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is a significant interest in ferroelectric (FE) multilayers, superlattices, and compositionally graded structures because such materials systems have been found to exhibit enhanced dielectric [1,2], pyroelectric [3,4], and piezoelectric [5] properties compared to their monolithic monolayer FE film counterparts. There exist several experimental studies where FE/paraelectric (PE) heterostructures are reported to display one to two orders of magnitude larger dielectric response in the vicinity of certain critical FE layer fraction [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Are ferroelectric multilayers capacitors in series?

et al. 2015

View full text Add to dashboard Cite

We show that ferroelectric multilayers are not simple capacitors in series (CIS) and treating these as CIS may lead to misinterpretation of experimental results and to erroneous conclusions. Here, we present a theoretical model of ferroelectric bilayers using basic thermodynamics taking into account the appropriate electrical boundary conditions and electrostatic fields. The spontaneous polarization mismatch in ferroelectric/ferroelectric (FE/FE), FE/paraelectric (FE/PE), and FE/dielectric (FE/DE) bilayers results in a non-linear electrostatic coupling which produces significant deviations in the overall dielectric response if it is computed using the simple capacitor-inseries (CIS) model. Our results show that the CIS approach is a good approximation only for DE/DE multilayers and for FE heterostructures if the individual layers are electrostatically screened from each other.

show abstract

Section: Introductionmentioning

confidence: 99%

Are ferroelectric multilayers capacitors in series?

et al. 2015

View full text Add to dashboard Cite

show abstract

“…This realization has led to patterning methods to create PZT islands [28][29][30] or bilayers [ 31 ] to partially release ferroelastic fi lms from the substrate's mechanical constraint. Although such methods increase electric-fi eld-driven 90 ° domain wall mobility relative to that of continuous, single-layer PZT fi lms, they are insuffi cient for probing the fundamental mobility of ferroelastic domains in thin fi lms and its relation to nanoscale materials features such as point defects, grain boundaries, and fi lm surface/interface features.…”

Section: Introductionmentioning

confidence: 99%

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Zednik

Anbusathaiah

Oliver

et al. 2011

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelastic (90°) domain wall motion occurs readily in bulk samples of displacive ferroelectrics such as Pb(Zr,Ti)O3 (PZT), dictating critical piezoelectric, dielectric, and polarization switching properties. Many prior studies have used converse piezoelectric measurements to probe the dynamics of ferroelastic domains in thin films; however, such experiments are strongly influenced by the mechanical clamping effect of the substrate, which inhibits electric field‐induced 90° domain wall motion. Nevertheless, these observations raise a tantalizing question: Does the application of mechanical stress, rather than electric field, result in an entirely different response in thin films? Here we report biaxial stress‐driven crystallographic reorientation of (100)/(001) textured, 70 nm thick Pb(Zr0.25Ti0.75)O3 films via 90° domain wall motion, measured in situ by both x‐ray diffraction and piezoforce microscopy. Visual evidence of nanoscale mechanisms that underlie the direct piezoelectric effect is shown. Mobile 90° domain walls effect complete orientation switching in the grains in which they operate, without apparent wall pinning, indicating that bulk‐like ferroelastic behavior can extend to nanocrystalline films in the absence of substrate clamping.

show abstract

“…have been reported. Additionally, switching dynamics in the vicinity of domain walls, 307,308 switching of more complex ferroelastic domain patterns, [309][310][311] switching near extended defects, 169,170 and as a function of humidity [312][313][314] have all been explored. Here, we will not recap these studies but note that they indicate the formation of a well-defined domain about a certain threshold voltage, with domain growth through lateral domain wall motion.…”

Section: Ferroelectric Switchingmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

270

206

View full text Add to dashboard Cite

Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

show abstract

Labile Ferroelastic Nanodomains in Bilayered Ferroelectric Thin Films

Cited by 62 publications

References 39 publications

Are ferroelectric multilayers capacitors in series?

Are ferroelectric multilayers capacitors in series?

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Contact Info

Product

Resources

About