LaF3 insulators for MIS structures

Abstract

Thin films of LaF 1 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively-hysteresisfree and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

“…The permittivity is close to the bulk value of 14. [59] The leakage current density versus electric field is depicted in Figure 10. The catastrophic breakdown occurred at electric field values of À1.8 and þ2.3 MV cm…”

Switching Individual Quantum Dot Emission through Electrically Controlling Resonant Energy Transfer to Graphene

“…28 LaF 3 is an ionic conductor at room temperature where the mobile carriers are fluorine ion vacancies. 28 Like liquid or ion-gel electrolytes previously employed to gate graphene, 13,29 LaF 3 can induce larger electrostatic doping than dielectric oxides. A LaF 3 film forms a thin dipole layer at its surface that produces a large capacitance, which can be effectively treated as that of a 10−20 nm thick insulating layer (independent of the actual film thickness) with a dielectric constant of 14.…”

“…A LaF 3 film forms a thin dipole layer at its surface that produces a large capacitance, which can be effectively treated as that of a 10−20 nm thick insulating layer (independent of the actual film thickness) with a dielectric constant of 14. 28 This work assumed 10 nm for the insulator's effective thickness. Graphene was covered with a thin film of insulating poly(methyl methacrylate) (PMMA) with varying thicknesses.…”

“…To test the effect of electrostatic doping on resonant energy transfer to graphene, we fabricated the device structure shown in Figure d,e. The graphene layer was back-gated with lanthanum fluoride (LaF 3 ), a solid-state electrolyte . LaF 3 is an ionic conductor at room temperature where the mobile carriers are fluorine ion vacancies .…”

“…The graphene layer was back-gated with lanthanum fluoride (LaF 3 ), a solid-state electrolyte . LaF 3 is an ionic conductor at room temperature where the mobile carriers are fluorine ion vacancies . Like liquid or ion-gel electrolytes previously employed to gate graphene, , LaF 3 can induce larger electrostatic doping than dielectric oxides.…”