Langasite-type materials: from discovery to present state

Mill, B. V.; Pisarevsky, Yu. V.

doi:10.1109/freq.2000.887343

Cited by 68 publications

(51 citation statements)

References 12 publications

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“…Na was determined, by glow discharge mass spectroscopy, to be the major impurity specie in nominally undoped langasite with concentration of 1.5 × 10 19 cm −3 (Northern Analytical Laboratory, Merrimack, NH). Na acts as an acceptor on the La site [22] and, within the ionic conductivity regime, should produce the same concentration of oxygen vacancies (according to Brouwer approximation [N a La ] ≈ [V r r O ]). With knowledge of the ionic conductivity and the oxygen vacancy concentration, the oxygen vacancy mobility can be calculated.…”

Section: Discussionmentioning

confidence: 99%

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Seh

Tuller

2006

J Electroceram

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Both nominally undoped and 1%Sr-doped langasite were found to exhibit acceptor behavior and correspondingly mixed ionic-electronic conductivity under experimentally accessible conditions. At high pO 2 , the conductivity of nominally undoped langasite was pO 2 -independent (ionic behavior) but became increasingly pO 2 -dependent (n-type behavior) under reducing conditions. The substitution of strontium on lanthanum sites, increased the ionic and introduced a p-type electronic conductivity behavior at the highest pO 2 's, while completely depressing the n-type electronic conductivity -observations consistent with predictions of the proposed defect model based on oxygen vacancy formation in response to negatively charged acceptor impurities.Sr-doped langasite was found to have a higher activation energy for oxygen ion transport (1.27 ± 0.02 eV) than nominally undoped langasite (0.91 ± 0.01 eV). This difference could not be successfully explained by applying a simple defect association model but required the assumption of long range defect interactions. Using the defect model, a number of key equilibrium constants (reduction (5.7 ± 0.06 eV), oxidation (2.18 ± 0.08 eV), electron-hole generation (3.94 ± 0.07 eV), and defect mobilities (oxygen vacancies and holes) were derived and summarized.

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Section: Discussionmentioning

confidence: 99%

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Seh

Tuller

2006

J Electroceram

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“…As analogues, LGN and LGT possess the same disorder structure [8,9]. This disorder structure may form ununiformity crystal field for Nd ions, which is an advantage for a pulse laser [10,11] I 11/2 ), which coincide with wavelengths of radiation from AlGaAs and InGaAs diode laser [12].…”

Section: Introductionmentioning

confidence: 99%

Effects of Er³⁺ doping concentration and calcination on fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ nanocrystals

Yuan²,

Guo

et al. 2008

Cryst. Res. Technol.

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“…Langasite retains its piezoelectric properties up to its melting point of 1,470°C and as such holds potential as a resonator platform for precision mass measurement and chemical sensor applications at high temperatures [1][2][3][4]. Surface acoustic wave (SAW) devices utilizing langasite have demonstrated operation to 750°C [5,6] and 1,000°C [7], while bulk acoustic waves (BAW) devices have been operated to 1,400°C [8].…”

Section: Introductionmentioning

confidence: 99%

Defect chemistry of langasite III: Predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance

Seh

Fritze²,

Tuller

2007

J Electroceram

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The electrical and gravimetric properties of langasite, La 3 Ga 5 SiO 14 , are related to its underlying defect and transport processes via previously developed predictive defect and transport models. These models are used here to calculate the dependence of the partial ionic and electronic conductivities and the mass change for langasite as functions of temperature, dopant type and level and pO 2 . Doping strategies devised for minimizing conductivity in langasite based on use conditions are described. For example, the required dopant level to achieve minimum conductivity and thus minimum electrical losses in acceptor-doped langasite is shown to depend on the operating pO 2 . Likewise intrinsic mass changes in langasite, dependent on dopant level, pO 2 and temperatures, if high enough, can mask mass changes induced in active layers applied to langasite when used as a microbalance. For example, the model predicts that the dopant level in donor-doped langasite has less of an impact on intrinsic mass change due to external environmental changes when compared to acceptor-doped langasite. The models are also applied in defining acceptable operating limits needed to achieve and/or the design of properties for desired levels of microbalance resolution and sensitivity.

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Langasite-type materials: from discovery to present state

Cited by 68 publications

References 12 publications

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Effects of Er³⁺ doping concentration and calcination on fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ nanocrystals

Defect chemistry of langasite III: Predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance

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Langasite-type materials: from discovery to present state

Cited by 68 publications

References 12 publications

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Defects and transport in langasite I: Acceptor-doped (La3Ga5SiO14)

Effects of Er3+ doping concentration and calcination on fluorescence properties of La3Ga5.5Nb0.5O14 nanocrystals

Defect chemistry of langasite III: Predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance

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Effects of Er³⁺ doping concentration and calcination on fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ nanocrystals