Lanthanide(III) Nitride Bismuthides M 2NBi (M: La-Nd) and Their Potential as Topological Insulators. -The title compounds are synthesized from mixtures of the respective lanthanide metal (M: La, Ce, Pr, Nd), CsN 3, elemental Bi, and MCl3 using CsCl as flux (silica tubes, 900 C, 7 d). The new compounds are characterized by powder and single crystal XRD, and TB-LMTO-ASA electronic structure calculations. They crystallize in the tetragonal space group P4/nmm with Z = 2. The structures contain 2 ] layers of condensed nitride-centered square pyramids of M 3+ cations. These pyramids are connected by all four basal edges to form a two-dimensional network that is separated by square double layers of Bi 3anions. The partial density of states and the band structure of La 2NBi show that this compound is a zero-band-gap semiconductor with a nontrivial topology and a high potential as topological insulator. -(WOLFF, K. K.; LISSNER, F.; KOEHLER, J.; SCHLEID*, T.; Eur. J. Inorg. Chem. 2015, 1, 92-98, http://dx.