Lanthanides and Actinides

α‐TeO2 Oxide as Transparent p‐Type Semiconductor for Low Temperature Processed Thin Film Transistor Devices

“…Morphological analysis of the 5 nm 𝛼-TeO 2 deposited thin film reveals a homogeneous, smooth and featureless characteristics of the film (Figure 1a). [32,33] Raman peaks of the 5 nm TeO 2 film observed at 230 and 647 cm −1 corresponds to the B 1 (5) and A 1 (4) vibrational modes which are characteristic for 𝛼-TeO 2 ; Notably, the two peaks at 647 cm −1 , and 230 cm −1 are mainly attributed to the symmetry and asymmetric stretching modes (Figure 1b). Figure 2a presents surface topography as determined by AFM of the as deposited 5 nm 𝛼-TeO 2 thin film (rms 0.14 nm).…”

“…Indeed, TeO 2 at temperatures above 550 °C decomposes into TeO which is unstable against Te(0) and O 2 . [32][33][34] Nevertheless, the presence of such trace amounts of elemental Te 0 might have an impact on improving the transistor characteristics as it is one of the well-known p-type semiconducting material reported recently demonstrating good device characteristics. [35] Similarly, the final device architecture consisting of a bi-layer of 𝛼-TeO 2 and alumina passivation layer processed at 50 °C has also been studied with XPS (Figure 3c-e).…”

Ph 3 PCN 2 : A stable reagent for carbon-atom transfer

“…A tomic carbon, the simplest building block for the construction of organic molecules and carbon allotropes, is known to be an extremely electrophilic species that is typically formed by electric discharge of a carbon arc and then vaporized into a low-temperature matrix for handling (1)(2)(3). Electron beam and laser-evaporative graphite methods (1-3) all require sophisticated equipment and simultaneously produce oligomers of atomic carbon.…”