Lanthanum-Doped Barium Stannate - a New Type of Critical Raw Materials-Free Transparent Conducting Oxide

Gogova, D.; Suwardi, Ady; Kuznetsova, Yu. A.; Zatsepin, A. F.; Mochalov, Leonid; Nezhdanov, Aleksey V.; Szyszka, Bernd

doi:10.15379/2408-977x.2017.04.01.01

Cited by 32 publications

(4 citation statements)

References 20 publications

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“…It clearly shows very high Φ of about 42 × 10 –3 Ω –1 of AZO films with buffer layers deposited at a substrate position of 6.5 cm compared with the previous literature data of ITO films of 28.66 × 10 –3 Ω –1 , 70 Nb-doped TiO 2 films of 5.6 × 10 –5 Ω –1 , 71 and La-doped BaSnO 3 films of 5 × 10 –3 Ω –1 . 72…”

Section: Resultsmentioning

confidence: 99%

“…R s , T av , and and La-doped BaSnO 3 films of 5 × 10 −3 Ω −1 . 72 To obtain a better understanding of the enhanced μ H in the presence of the buffer layer, we calculated the optical mobility (μ opt ) and the ratio of μ opt to the carrier mobility at the grain boundaries (μ GB ). The ratio μ opt /μ GB is an important parameter for quantifying the degree of the contribution of grain-boundary scattering to carrier transport.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

et al. 2019

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The use of a 10-nm-thick buffer layer enabled tailoring of the characteristics, such as film deposition and structural and electrical properties, of magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. The AZO films were deposited on glass substrates coated with the buffer layer via direct-current magnetron sputtering using Ar gas, a substrate temperature of 200 °C, and sintered AZO targets with an Al2O3 content of 2.0 wt %. The use of a Ga-doped ZnO film possessing a texture with a specific well-defined orientation as the buffer layer was very effective for improving the crystallographic orientation, reducing the residual stress, and improving the carrier transport of the AZO films. The residual compressive stress and in-grain carrier mobility were responsible for the retention of Ar atoms by the films, as observed using an electron probe microanalyzer.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

et al. 2019

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“…Sustainable development in terms of preserving the environment requires employment of a great number of sensors: biosensors, image sensors, motion sensors, and chemical sensors for indoor and outdoor as well as for industry-relevant gas surveillance and control. Wide bandgap metal oxide semiconductors tin dioxide (SnO 2 ) and gallium oxide (Ga 2 O 3 ) are of high interest for the development of gas sensors and transparent contacts, finding applications in a number of devices [1][2][3][4][5][6]. Heterostructures based on metal oxide semiconductors allow the advantages of each component to be combined in a single structure [7].…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

et al. 2023

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The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H2 exposure exceeded the corresponding values of single κ(ε)-Ga2O3:Sn and SnO2 films within the temperature range of 25–175 °C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/κ(ε)-Ga2O3:Sn structure to 104 ppm of H2 and 100 ppm of NO2 were 30–47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 °C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on κ(ε)-Ga2O3:Sn. The SnO2/κ(ε)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.

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“…Eco and bio-friendly compounds possessing excellent optical and electrical properties are strongly desired for future microelectronic industry (Giraldo et al, 2019;Gogova et al, 2017;Torrisi et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

An efficient ITO-free transparent electrode based on diamond-like carbon with an engineered intermediate metallic thin-film

et al. 2020

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Lanthanum-Doped Barium Stannate - a New Type of Critical Raw Materials-Free Transparent Conducting Oxide

Cited by 32 publications

References 20 publications

Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

An efficient ITO-free transparent electrode based on diamond-like carbon with an engineered intermediate metallic thin-film

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