Large- and small-signal IMD behavior of microwave power amplifiers

Carvalho, Nuno Borges; Pedro, José C.

doi:10.1109/22.808983

Cited by 159 publications

(94 citation statements)

References 7 publications

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“…IMD behavior in MESFET amplifiers has been treated in [3]. The analysis combines Volterra series for low input power with describing functions and harmonic balance for higher input power.…”

mentioning

confidence: 99%

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Fager

Pedro

Carvalho

et al. 2002

IEEE Trans. Microwave Theory Techn.

Self Cite

115

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Abstract-In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.

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“…IMD behavior in MESFET amplifiers has been treated in [3]. The analysis combines Volterra series for low input power with describing functions and harmonic balance for higher input power.…”

mentioning

confidence: 99%

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Fager

Pedro

Carvalho

et al. 2002

IEEE Trans. Microwave Theory Techn.

Self Cite

115

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“… Present model using matlab curve fittingtoolbox. Comparing these curves it is found that the error between the two curves is less than 2%, thus equation (6) is approximately the same as equation (4).…”

Section: Theoretical Analysismentioning

confidence: 66%

“…The traditionally nonlinear analysis method is more difficult because it uses more complicated mathematical solutions, such as voltera series [3] based on small signal model transistors, while it hardly describes the large signal nonlinearity [4] for the omission of the DC offset with AC input. Wu Tuo Chen, Hongyi and Qian Dahong [5] introduced a model to improve the linearity of RF PAs; this model indicates that the DC bias resistance can affect the nonlinearity, but this model is very difficult to study, and more complicated to make any modification required for improvement of linearity and efficiency, this paper introduces a computer simulation analytic model to improve the linearity and efficiency of RF linear PAs.…”

Section: Introductionmentioning

confidence: 99%

An Analytical Model for Improvement of Linearity and Efficiency of RF Linear Power Amplifiers for Radar Systems

Almslmany¹,

Wang²,

Cao³

2014

IJMO

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Abstract-Power amplifier is the key component in radar systems, so linearity and efficiency is the most important parameters in order to maintain the performance of power amplifier, based on matlab curve fitting toolbox an analytical model for improvement of linearity and efficiency of radio frequency (RF) linear power amplifiers (PAs) is introduced. This model simplifies the traditionally complicated methods of analysis of RF PA. According to a change of the direct current (DC) bias as a function of the alternative current (AC) input signal of RF linear PA the linearity and efficiency can be improved.

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“…Carvalho and Pedro have mathematically formulated the overall IMD behaviour by integrating the small and large signal contributions in closed form analytical expression [21].…”

Section: A Dynamic Gate Bias Techniquementioning

confidence: 99%

“…There are some particular PA features that provide a way to escape from this apparent dead end. One of such PA characteristics resides in the so-called large-signal IMD sweet-spots, i.e., a deep in the IMD vs. P in plot [16,17]. IMD sweetspots can be understood as the result of interactions between the PA mild and strong nonlinearities [18].…”

Section: Introductionmentioning

confidence: 99%

A Contribution to Linearity Improvement of a Highly Efficient Pa for Wimax Applications

Maazouzi¹,

Mediavilla²,

Colantonio³

2011

PIER

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Abstract-This paper describes the design of a highly efficient and linear GaN HEMT power amplifier which may be used in WiMAX application. To improve linearity of highly efficient power amplifiers, a technique using diodes in the gate DC path was applied to TL and 2HT amplifier. This solution using diodes offers a good manner to improve linearity near saturation zone compared to the approach using only a DC gate resistor for TL (tuned load) case as well as for 2HT (second harmonic tuning approach). A 2.5 GHz 2HT power amplifier circuit was built, and measured data confirm the linearity improvement, particularly near saturation zone, as predicted by simulation, maintaining higher power performances. An output power of 36.8 dBm has been measured with an associated power added efficiency of 46.5% and carrier to third order intermodulation (C/I3) of 53.4 dBc. A 2HT PA also exhibits good performances across the full (2.3-2.7) GHz band. An output power ranging from (35-36.9) dBm with an associated gain of 12.9 ± 0.9 and a power added efficiency ranging from (40-46)% are measured across the full (2.3-2.7) GHz band.

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Large- and small-signal IMD behavior of microwave power amplifiers

Cited by 159 publications

References 7 publications

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

An Analytical Model for Improvement of Linearity and Efficiency of RF Linear Power Amplifiers for Radar Systems

A Contribution to Linearity Improvement of a Highly Efficient Pa for Wimax Applications

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