Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology (Conference Presentation)

Carballo, V.M. Blanco; Paolillo, Sara; Veen, M. van der; Larivière, S.; Lorusso, Gian; Poortere, Etienne De; Tabery, Cyrus; Qiao, Fei; lai, shu-yu; Kea, Marc; wang, Luke; Su, Yu-Chi; Oh, Joe; huang, jim; chen, jimmy; Huang, Jonathan

doi:10.1117/12.2536943

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2022

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“…Note: All the results reported in this section are part of an imec-ASML- HMI collaboration, see 10 for additional details. The e-beam tool used for this work is HMI eP5.…”

Section: Resultsmentioning

confidence: 99%

Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography

Lorusso

2022

J. Micro/Nanopattern. Mats. Metro.

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Things are drastically changing in the field of metrology. The main reason for that is related to the daunting specification requirements for metrology imposed by high numerical aperture extreme ultraviolet lithography (high NA EUVL). We observe a variety of generation e-beam tools proliferating in imec unique ecosystem, from in-line transmission electron microscope (TEM) to voltage contrast (VC) overlay tools, from die to database (D2DB) large area scanning electron microscope (SEM) to high-voltage SEM, from artificial intelligence (AI)based inspection tools to massive data acquisition e-beam system. We are facing a renaissance of e-beam metrology. We are going to describe the challenges as well as the latest evolutionary developments of e-beam metrology in the semiconductor industry.

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“…Note: All the results reported in this section are part of an imec-ASML- HMI collaboration, see 10 for additional details. The e-beam tool used for this work is HMI eP5.…”

Section: Resultsmentioning

confidence: 99%

Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography

Lorusso

2022

J. Micro/Nanopattern. Mats. Metro.

View full text Add to dashboard Cite

show abstract

Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology (Conference Presentation)

Cited by 1 publication

References 0 publications

Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography

Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography

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