Large-area femtosecond laser milling of silicon employing trench analysis

Bhaskar, Arun; Philippe, Jean‐Marc; Braud, Flavie; Okada, Étienne; Avramovic, Vanessa; Robillard, J.F.; Durand, C.; Gloria, D.; Gaquière, Christophe; Dubois, Emmanuel

doi:10.1016/j.optlastec.2020.106866

Cited by 11 publications

(6 citation statements)

References 52 publications

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“…About 25-100 cycles of etch are needed depending on the thickness of the silicon to be etched to completely remove the handler silicon in the ablated area to obtain membranes of circuits suspended on the BOX. The laser ablation process, also referred to as FLAME (Femtosecond Laser-Assisted Micromachining and Etching), is fully detailed in [26,27]. A high removal rate of up to 8.5 × 10 6 µm 3 s −1 is obtained by optimized laser milling parameters.…”

Section: Laser-assisted Substrate Removalmentioning

confidence: 99%

“…The cross-sectional image of the switch cavity after laser processing and prior to XeF2 etching is shown in Figure 9a. This selective etching step is described in detail in [26,34]. After completion of XeF 2 etching, the residual silicon handler is safely and cleanly removed as illustrated from DLM images shown in Figure 9b.…”

Section: Device Structure Rf Ports and DC Biasmentioning

confidence: 99%

“…This selective etching step is described in detail in [26,34]. After completion of XeF etching, the residual silicon handler is safely and cleanly removed as illustrated from DLM images shown in Figure 9b.…”

Section: Characterizationmentioning

confidence: 99%

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Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

et al. 2022

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With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF front ends. In this context, a fast, flexible and local laser ablation technique of the silicon handler allows for the membrane suspension of large millimeter-scale circuits. This approach enables the evaluation of the ultimate performance in the absence of the substrate, i.e., without dissipative losses and substrate-induced non-linear effects, on capacitive comb coupling structures and RF switches. Compared to high-resistivity SOI substrates, the high frequency characterization of RF membrane switches reveals a superior linearity performance with a reduction in second and third harmonics by 17.7 dB and 7.8 dB, respectively. S-parameter analysis also reveals that membrane suspension entails insertion losses that are improved by 0.38 dB and signal reflection lowered by 4 dB due to a reduced off-state capacitance. With reference to a trap-rich substrate, the membrane suspension also achieves an additional 7.8 dB reduction in the second harmonic, indicating that there is still scope for improvement in this figure of merit. The obtained results demonstrate a new way to evaluate optimized circuit performance using post-fabrication substrate engineering.

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Section: Laser-assisted Substrate Removalmentioning

confidence: 99%

Section: Device Structure Rf Ports and DC Biasmentioning

confidence: 99%

See 1 more Smart Citation

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

et al. 2022

Self Cite

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show abstract

“…About 25-100 cycles of etch are needed depending on thickness of silicon to be etched to completely remove the handler silicon in the ablated area to obtain membranes of circuits suspended on the BOX. The laser ablation process, also referred to as FLAME (Femtosecond Laser Assisted Micromachining and Etching), is fully detailed in [24] [25]. A high removal rate of up to 8.5 x 10 6 µm 3 s -1 is obtained by optimized laser milling parameters.…”

Section: Laser Assisted Substrate Removalmentioning

confidence: 99%

Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

Bhaskar¹,

Philippe²,

Okada³

et al. 2020

Preprint

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“…9,10) There has been much research on suppressing the PSC effect of SOI substrates. In addition to utilizing the passivation layers, [11][12][13][14][15][16][17][18] the approach of silicon handle substrates removal is considered a promising option and has been primarily implemented in micro-electro-mechanical systems process 19,20) and silicon-germanium heterojunction bipolar transistors 21) In this work, we employ the substrate removal technique in RF SOI substrate through inductively coupled plasma (ICP) etching, expecting better RF performance and proton irradiation tolerance. Moreover, this technique has benefits regarding the CMOS-compatibility, device design feasibility, and cost-effectiveness.…”

mentioning

confidence: 99%

The impacts of localized backside etching on proton radiation response in SOI passive devices

Zhao

et al. 2023

Jpn. J. Appl. Phys.

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In this work, the effect of high-energy proton irradiation on the radiofrequency (RF) properties of silicon-on-insulator (SOI) substrates is investigated. The localized backside etching (LBE) structure is introduced for RF properties improvement and proton irradiation hardening. It is observed that after the 50 MeV proton irradiation with a fluence of 1×1012 p/cm2, the attenuation, crosstalk, and relative permittivity significantly decrease for conventional SOI substrates. In contrast, LBE substrates are less sensitive to proton irradiation and simultaneously exhibit better RF performance. The enhancement of the LBE structure on irradiation tolerance is qualitatively characterized by the equivalent circuit model parameter extraction.

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Large-area femtosecond laser milling of silicon employing trench analysis

Cited by 11 publications

References 52 publications

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

The impacts of localized backside etching on proton radiation response in SOI passive devices

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