Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

Reina, Alfonso; Jia, Xiaoting; Ho, Jia Shin; Nezich, Daniel; Son, Hyungbin; Bulović, Vladimir; Dresselhaus, M. S.; Kong, Jing

doi:10.1021/nl801827v

Cited by 5,474 publications

(4,555 citation statements)

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“…The growth temperature (550 °C) was found to be lower than the temperatures for CVD graphene growth (≈900–1000 °C) 84, 85, 86, 87. Therefore, it enabled the growth of graphene on glass substrates.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 95%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

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To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

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Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 95%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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“…17,18 More recently, attempts have been made to introduce heteroatoms (e.g., nitrogen) into graphene sheets for modulation of their electronic properties. 19 As far as we are aware, however, the possibility for nitrogen-containing graphene sheets (N-graphene, we designate the N-free graphene as C-graphene for convenience) to be used as catalysts for the ORR process in fuel cells has not been exploited.…”

mentioning

confidence: 99%

“…The sample was then rapidly moved out from the furnace center (1000°C) under Ar protection. The resultant N-graphene film can be readily etched off from the substrate by dissolving the residual Ni catalyst layer in an aqueous solution of HCl, 17,18 allowing the freestanding N-graphene sheets to be transferred onto substrates suitable for subsequent investigation. Figure 1a shows a free-standing film of ca.…”

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confidence: 99%

Nitrogen-Doped Graphene as Efficient Metal-Free Electrocatalyst for Oxygen Reduction in Fuel Cells

et al. 2010

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. ¶ These authors contributed equally.P latinum (Pt) nanoparticles have long been regarded as the best catalyst for the oxygen reduction reaction (ORR) in fuel cells, though the Pt-based electrode still suffers from its susceptibility to timedependent drift and CO deactivation. 1Ϫ3 Furthermore, the high cost of the Pt catalysts, together with the limited reserves of Pt in nature, has been shown to be the major "showstopper" to mass market fuel cells for commercial applications. That is why the large-scale practical application of fuel cells has not been realized, though alkaline fuel cells with platinum as an ORR electrocatalyst were developed for the Apollo lunar mission in the 1960s. 4 Along with recent intensive research efforts in reducing or replacing Ptbased electrodes in fuel cells, 3,5Ϫ11 we have found that vertically aligned nitrogencontaining carbon nanotubes (VA-NCNTs) produced by pyrolysis of iron(II) phthalocyanine (a metal heterocyclic molecule containing nitrogen), 12 in either the presence or absence of additional NH 3 vapor, 3 could act as effective metal-free ORR electrocatalysts. The metal-free VA-NCNTs were shown to catalyze a four-electron ORR process free from CO "poisoning" with a 3-time higher electrocatalytic activity, smaller crossover effect, and better long-term operation stability than that of commercially available Pt-based electrodes (C2Ϫ20, 20% platinumonVulcanXC-72R; E-TEK) in alkaline electrolytes. 3 On the basis of the experimental observations and quantum mechanics calculations, we attributed the improved catalytic performance to the electronaccepting ability of the nitrogen atoms, which creates a net positive charge on adjacent carbon atoms in the nanotube carbon plane of VA-NCNTs to readily attract electrons from the anode for facilitating the ORR. 3 Uncovering this new ORR mechanism in nitrogen-doped carbon nanotube electrodes is significant as the same principle could be applied to the development of various other metal-free efficient ORR catalysts for fuel cell applications.The recent discovery of graphene has opened up a new era of 2-dimensional (2D) fundamental science and potential technology. 13Ϫ15 As mother of all graphitic forms, graphene is a building block for carbon materials of all other dimensionalities, such as 0D buckyballs, 1D nanotubes, and 3D graphite. Having many similarities to carbon nanotubes (CNTs) in structure and property, including its high aspect ratio (the ratio of lateral size to thickness), large surface, rich electronic states, and good mechanical properties, graphene is an attractive candidate for potential uses in many areas where the CNTs have been exploited. Superior to CNTs, the one atomic-thick graphene sheets with a 2D planar geometry will further facilitate electron transport, 16 and hence the more effective electrode materials.

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Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

Cited by 5,474 publications

References 45 publications

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Nitrogen-Doped Graphene as Efficient Metal-Free Electrocatalyst for Oxygen Reduction in Fuel Cells

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