Large-area InP-based crystalline nanomembrane flexible photodetectors

Yang, Weiquan; Yang, Hongjun; Qin, Guoxuan; Ma, Zhenqiang; Berggren, Jesper; Hammar, Mattias; Soref, Richard A.; Zhou, Weidong

doi:10.1063/1.3372635

Cited by 70 publications

(50 citation statements)

References 11 publications

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“…Samples were also prepared on flexible substrates. The measured responsivities were of the order of~0.1 A/W, comparable to state-of-the-art bulk semiconductor flexible membranes [61]. Despite the low out-of-plane mobility in layered TMDs [62], picosecond photoresponse times were measured because of the short carrier travel distance in ultrathin heterostructures [63].…”

Section: Photodetectorsmentioning

confidence: 77%

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

2016

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Abstract:We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nanoscale lasers, single photon emitters, valleytronics devices, as well as photovoltaic cells. Lateral and vertical device layouts and different operation mechanisms are compared. An insight into the emerging field of valley-based optoelectronics is given. We conclude with a critical evaluation of the research area, where we discuss potential future applications and remaining challenges.

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Section: Photodetectorsmentioning

confidence: 77%

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

2016

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“…Residual Al0.4Ga0.6Sb may result in an increased roughness of the membrane backside, thereby promoting a weak bond between the membrane and the new substrate. Transfer of membranes on metal-coated substrates may also be used to provide the T2SL with electrical contacts via interface bonding (23,33). In this scenario, a residual Al0.4Ga0.6Sb will drastically increase the resistance of the contact.…”

Section: Resultsmentioning

confidence: 99%

“…In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18). Despite the numerous demonstrations of membrane technology applied to III-V semiconductors (18)(19)(20)(21)(22)(23)(24)(25)(26), fabrication and detailed characterization of Sb compounds in membrane form has not been reported. For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure.…”

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confidence: 99%

Antimonide-based membranes synthesis integration and strain engineering

Zamiri

Anwar

Klein

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

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Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metalcoated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 µm and lateral sizes from 24 × 24 µm 2 to 1 × 1 cm 2 . Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.antimonide | membranes | transfer | infrared | integration E pitaxially grown Sb compounds have recently received increasing attention as functional layers in IR detectors (1-4) and sources (5-9), high-mobility transistors (10-12), resonant tunneling diodes (13-15), and low-power analog and digital electronics (10,16). In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18). Despite the numerous demonstrations of membrane technology applied to III-V semiconductors (18-26), fabrication and detailed characterization of Sb compounds in membrane form has not been reported. For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure. We demonstrate that wet and dry techniques (17, 18) (i.e., transfer in liquid or mediated by a stamp, respectively) yield successful transfer of T2SL membranes with thickness ranging from 100 nm to 2.5 µm, and lateral sizes going from 24 × 24 µm 2 to 1 × 1 cm 2 . We bond InAs/(InAs,Ga)Sb T2SLs to a large variety of hosts, including elastomers and rigid substrates, and both insulating and semiconducting substrates. Electron microscopy and X-ray diffraction (XRD) show that the crystal structure and the strain state of the materials are minimally altered during the release and transfer process. Mechanical modeling establishes that elastic strain up to ∼3.5% can be imparted in nanoscale-thickness AlInSb/InSb/AlInSb membranes by external bending. Finally, we demonstrate the functionality of Sbbased superlattices bonded to Si via photoluminescence (PL) and cha...

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“…The second challenge is the incorporation of metal contacts for the desired electrical properties of photonic devices. Here we developed frame assisted membrane transfer (FAMT) process to address these two challenges [8]. Large area flexible InP photodetectors (PD) and solar cells were demonstrated experimentally based on this FAMT process.…”

mentioning

confidence: 99%

Frame-assisted membrane transfer for large area optoelectronic devices on flexible substrates

Yang

Chuwongin

et al. 2011

IEEE Winter Topicals 2011

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Frame assisted membrane transfer process was developed to transfer large area crystalline semiconductor nanomembranes on flexible plastic substrates. InP nanomembranes as large as 2cm×2cm was transferred successfully. Large area flexible photodetectors, solar cells and LED arrays all have been demonstrated experimentally, based on transferred InP nanomembranes.Flexible optoelectronics devices based on single crystal semiconductor nanomembranes (NM), which combine the advantages of high quality single crystalline semiconductors, with the flexibility property, are highly desirable for a wide range of applications from flexible imaging/displays, sensors, solar cells and conformal electronic/photonic integrated systems, to potential integration into artificial muscles or biological tissues. High quality single crystalline silicon NMs have been transferred onto various foreign substrates, such as glass, flexible PET (polyethylene terephthalate) plastics, etc., based on low temperature transfer and stacking processes. [1][2][3][4][5][6][7] However, two significant challenges remain in realizing practical large-area photonic devices based on stacked crystalline semiconductor NMs. The first one is the reliable transfer of large-area crystalline semiconductor NMs, especially for the fragile materials systems (e.g. GaAs, InP compound semiconductors). The second challenge is the incorporation of metal contacts for the desired electrical properties of photonic devices. Here we developed frame assisted membrane transfer (FAMT) process to address these two challenges [8]. Large area flexible InP photodetectors (PD) and solar cells were demonstrated experimentally based on this FAMT process. Similarly, we have also demonstrated flexible InP LED arrays based on substrate removal transfer processes.Shown in Fig. 1 are the schematics of FAMT process for InP NMs. The starting material is a p-i-n InP layer (total thickness of 1 μm) grown on top of an InP substrate, with an InGaAs sacrificial layer sandwiched in between. Release holes were formed first on the top InP layer, followed by Au finger contact formation. Due to the weak mechanical properties of InP, it is a significant challenge to transfer larger-area InP NMs without any other supporting structures. The Au finger contacts here serve as the device electrodes, as well as the frame to offer the desired mechanical strength for the successful transfer of large area InP NMs. Shown in Fig. 2(a) and 2(b) are pictures and micro-graphs of the InP NMs transferred on ITO/PET substrates. Very high quality 3 mm x3 mm InP NM was successfully transferred. Note the size of NMs is mostly limited by the size of photomask patterns used here. Shown in Fig. 2(c) is a transferred crystalline InP NM on PET substrate, with the size as large as 2 cm x2 cm. The suspended NM during transfer process is shown in Fig. 2(d).Large area flexible photodetectors, solar cells and LED arrays all have been demonstrated experimentally, as shown in Fig. 3, based on transferred InP nanomembranes. The measured flex...

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Large-area InP-based crystalline nanomembrane flexible photodetectors

Cited by 70 publications

References 11 publications

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

Antimonide-based membranes synthesis integration and strain engineering

Frame-assisted membrane transfer for large area optoelectronic devices on flexible substrates

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