Large-Area Nanopatterning Based on Field Alignment by the Microscale Metal Mask for the Etching Process

Abstract

Recently, researchers have dedicated efforts toward producing large-area nanostructures using advanced lithography techniques and state-of-the-art etching methods. However, these processes involve challenges such as the diffraction limit and an unintended etching profile. In this work, we demonstrate large-area nanopatterning on a silicon substrate using the microscale metal mask by meticulous optimization of the etching process. Around the vertex of a microscale metal mask, a locally induced electric field is generated by a bias voltage applied on a silicon mold. We utilize this field to change the trajectory of reactive ions and their effect flux, thus providing a controllable bowing effect. The results are analyzed by both numerical simulations and experiments. Based on the field alignment by the metal mask for the etching (FAME) process, we demonstrate the fabrication of 378 nm-size nanostructure patterns which translate to a size reduction of 63% from 1 μm-size mask patterns on a wafer by optimization of the processes. This is much higher than the undercut (∼37%) usually achieved by a typical non-Bosch process under similar etching conditions. The optimized nanostructure is used as a mold for the transfer printing of nanostructure arrays on a flexible substrate to demonstrate that it enables the functionality of FAME-processed nanostructures.

Quantum Plasmonics: Energy Transport Through Plasmonic Gap

“…[20,22,23] On smaller regime and the sub-nanometer scale, it fails to provide an adequate description of how the electron escapes the resonant structure, thereby tuning the effective dielectric functions of the material. [24][25][26][27][28] In this section, we provide an overview on the theory of classical and quantum plasmonics for a single particle, from the bulk scale down to the atomic scale as a function of the scale factor; [9,[29][30][31][32][33][34][35] then, we further investigate assembled nanoparticles, considering the sub-nanometer or nanometer interparticle distances within advanced materials. [2] First, we discuss the bulk or volume plasmons and surface plasmons.…”

On-Chip Nanoscale Light Source Based on Quantum Tunneling: Enabling Ultrafast Quantum Device and Sensing Applications

“…When these problems are solved, it will be possible to achieve highly improved speed communications, data processing, and ultrasensitive sensing technology. By exploring the wide range of material selection and of active materials such as quantum dots, fluorescent materials, diamond, or 2D materials in quantum devices, we can expand the potential of ultrasmall quantum devices in large areas for application in emerging quantum information technology [91][92][93][94][95][96][97].…”

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“…Some specific patterns fabricated on the material is a well‐known method to improve the properties of the surface, which is called surface texturing. Many methods can generate the surface texture, including lithography [4], imprint [5], etching [6] and laser surface texturing (LST) [7]. LST is a clean, non‐contact, non‐cutting and independent of mechanical material properties technology that can create multifunctional surfaces, which is widely used in various fields.…”