2015
DOI: 10.1016/j.solmat.2015.02.034
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Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers

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Cited by 21 publications
(14 citation statements)
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“…The measured V oc (658 mV) of the cell is comparable with other laser-doped p-type PRC cells reported in the literature based on Al 2 O 3 passivation and Al doping [5], although the cell architecture (rear pitch and contact fraction) may not be the same. Nevertheless, the V oc of the cell is definitive evidence of well-passivated surfaces, justifying the lifetime and C-V study and demonstrating the suitability of Ga 2 O 3 as a passivating material.…”
Section: B Solar Cell Resultssupporting
confidence: 77%
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“…The measured V oc (658 mV) of the cell is comparable with other laser-doped p-type PRC cells reported in the literature based on Al 2 O 3 passivation and Al doping [5], although the cell architecture (rear pitch and contact fraction) may not be the same. Nevertheless, the V oc of the cell is definitive evidence of well-passivated surfaces, justifying the lifetime and C-V study and demonstrating the suitability of Ga 2 O 3 as a passivating material.…”
Section: B Solar Cell Resultssupporting
confidence: 77%
“…A particularly attractive option is to use gallium oxide as both a passivating layer and as a dopant source in a laser-firing process, in an analogous process to that already developed using Al 2 O 3 [2]- [5]. Whether Ga doping can deliver advantages over Al doping in a laser-firing process will need more detailed investigation since recombination in the doped region can be dominated by structural defects that result from the recrystallization process, and not the dopant species [24].…”
Section: A Laser Doping From Ga 2 Omentioning
confidence: 99%
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“…However, while a lighter doping will decrease recombination in the bulk of the emitter, it might not assist in further reducing the surface recombination rate in the passivated regions [53] and will increase the recombination rate at metallized regions because of reduced field-effect passivation [54], [55]. A possible solution is the adoption of a selective emitter structure, which could be implemented by laser incorporation of Al atoms from the passivating ALD Al 2 O 3 , as already demonstrated for the BSF of p-type PERC cells [56]. Finally, some considerations on LID.…”
Section: Best I-v Results and Light-induced Degradationmentioning
confidence: 99%
“…For p-type laser doping, the rear aluminium oxide layer was used as a dopant source. [114] Laser doping was performed on the front surface for n-type doping and the rear surface for p-type doping using a 532nm continuous wave Newport laser with a spot size of ,20 mm. For the n-type doping, a power of 14 W and a speed of 2 m s À1 were used.…”
Section: Methodsmentioning
confidence: 99%