Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications

Abstract

2020). Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano-and opto-electronic applications. Nanotechnology, 31(25), [255603]. https://doi. AbstractThe patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS 2 thin films on device ready SiO 2 /Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to fewlayered MoS 2 has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS 2 and WS 2 thin films over a large area which opens up an avenue for their direct integration in future nano-and opto-electronic device applications.Supplementary material for this article is available online

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

“…[118] However, this approach might suffer from difficulties in defect-free passivation similar to most of the existing area-selective ALD processes, [120,121] and would ideally still require hindering of vertical growth. Recently, first investigations into area-selective ALD of TMDCs based on both inherent material selectivity [122][123][124] and area-selective passivation [121,125] have been reported, although these studies have not focused on increasing the grain size. Nevertheless, it is clear that controlling nucleation and diffusion is a powerful approach to tailor growth of ALD TMDCs that should be further examined.…”

“…-2019 [277] Mo(CO) 6 + O 2 plasma 200 (600 + 1000, H 2 S) 1-5 ML films (≈10-30 nm) photodetector 2015 [278] 200 (200 + 600-1000, H 2 S) 3-4 nm films (4-30 nm) -2020 [279] 165 (500-1000, S) 2 ML to 10 nm films (<10 nm at 500 °C to 50-200 nm at 1000 °C) -2019 [280] 155 (400, Ar + 500, S + 900, S) 1-4 ML films (≈10 nm) FET 2017 [281] 155 (400, Ar + 500, S + 900, S) 4 ML film FET 2020 [282] 165 (200, H 2 /H 2 S) ≈5 nm film PEC 2019 [283] Mo(N t Bu) 2 (NMe 2 ) 2 + O 3 300 (300 + 600 + 900-1000, S/H 2 ) ≈5-10 nm films (cryst.) -2017 [284] Mo(N t Bu) 2 (NMe 2 ) 2 + O 2 plasma 50 (900, H 2 S) 1-8 ML films (≈5-50 nm) -2020 [125] 150 (300 + 600 + 900-1000, S/H 2 ) 1 ML to 10 nm films (cryst.) -2017 [284] Mo…”

“…-2019 [200] W(N t Bu) 2 (NMe 2 ) 2 + O 2 plasma 50 (900, H 2 S) ≈10 ML films (cryst.) -2020 [125] 150 (700, CS 2 ) ? (cryst.)…”

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

“… 21 − 23 Furthermore, ALD is known for its excellent thickness control, 19 , 21 , 22 , 24 uniformity, and it is inherently capable of conformally coating complex 3D structures. 21 , 25 , 26 …”

Few-Layered mos₂ Nanoparticles Covering Anatase tio₂ Nanosheets: Comparison Between Ex-Situ and in-Situ Synthesis Approaches

“…A small nanoparticle with lateral dimension of 20 nm and 5 nm in thickness, exposes 6.5 Å spaced interference fringes that disrupted in the centre (Figure 2d). Such nanoparticle of irregular shape can be safety assigned to a MoS2 slab with a stacking number > 5-6 [39]. , where regular interference fringes 3.53 Å spaced that correspond to (101) planes of anatase are decorated with more irregular fringes.…”