2015
DOI: 10.1063/1.4929578
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Large-area patterning of sub-100 nm epitaxial L1 FePt dots array via nanoimprint lithography

Abstract: Bit-patterned media, a promising candidate for next generation high density magnetic recording, requires sub-100 nm dots array on a wafer scale, a high degree of patterning control of the size distribution, and a material with high perpendicular anisotropy. In this work, large area (0.75 cm × 0.75 cm) dots array was achieved by nanoimprint lithography and ion milling from L10 FePt thin films that are pre-sputtered at 450 °C with both high crystalline quality and good chemical order. The sub-100 nm dots are dec… Show more

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Cited by 6 publications
(4 citation statements)
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“…The hexagonal array of FePt nanoparticles reveals a large coercivity of 1.5 T, much larger than the nanoparticles fabricated by top-down approaches. [51][52][53][54][55] Most of the top-down methods use either e-beam lithography, 53,55 nanoimprinting 52 or the self-assembled co-polymer 51,54 to define the pattern size of masks. All of them need to use ion etching for pattern transferring, and the ion damage usually causes the reduction of coercivity due to the disordering of the FePt L1 0 structure as the high coercivity of FePt is believed to originate from the L1 0 atomic ordering structure.…”
Section: Magnetic Propertiesmentioning
confidence: 99%
“…The hexagonal array of FePt nanoparticles reveals a large coercivity of 1.5 T, much larger than the nanoparticles fabricated by top-down approaches. [51][52][53][54][55] Most of the top-down methods use either e-beam lithography, 53,55 nanoimprinting 52 or the self-assembled co-polymer 51,54 to define the pattern size of masks. All of them need to use ion etching for pattern transferring, and the ion damage usually causes the reduction of coercivity due to the disordering of the FePt L1 0 structure as the high coercivity of FePt is believed to originate from the L1 0 atomic ordering structure.…”
Section: Magnetic Propertiesmentioning
confidence: 99%
“…However, challenges still remain. Annealing or growth temperatures of 450°C or higher are required to obtain nanodots of high PMA L1 0 phases, 14,15 and nanostructuring of L1 0 Mn-Ga required the use of electron beam lithography. 16 These procedures are not ideal for device fabrication.…”
mentioning
confidence: 99%
“…For example, a directed self-assembly of nanoparticles has been interested because of large area patterning. [13][14][15][16][17] Nonetheless, this technique still has some challenges such as controlling island size distribution, obtaining small island size, and fabricating perfect templates or masks. 18 Besides the island size fluctuation, the written-in error can also be caused by bit island position jitter, main pole position fluctuation, heat spot position, and so forth.…”
Section: Introductionmentioning
confidence: 99%