Large area single crystal (0001) oriented MoS2

Abstract

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and the potential to create exciting new physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS 2 ) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS 2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS 2 . Photoluminescence and electrical measurements confirmed the growth of optically active MoS 2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS 2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

“…This indicates that the amorphous MoO 3 has transformed to α MoO 3 , which would help form a good interface between MoS 2 and sapphire substrate. For the post sulfurization sample, a strong characteristic peak at 2θ = 14.3° and a weak peak at 2θ = 60.2° were observed, which were assigned to MoS 2 (002) and (008) lattice planes [10] parallel to the substrate surfaces. Form t =λ/(B × cos θ), grain size of 4L MoS 2 is calculated to be 3.4 nm.…”

“…CVD approaches involving sulfurizing pre deposited metal or oxide prepared by physical vapor deposition (PVD) such as electron beam evaporation have been proven to be effective in large scale and controllable growth of TMDCs on various substrates. [10][11][12][13][14] In these methods, the MoS 2 layer thickness was controlled by adjusting the Mo or MoO x thick ness, i.e., evaporation rate and time during PVD. However, the large scale film uniformity, deposition repeatability, and process stability and scalability are far from satisfactory, due to the intrinsic drawbacks of such deposition methods.…”

Layer-transferred MoS2/GaN PN diodes

“…19 This growth process was improved by changing the sulfur precursor to MoS 2 powder and increasing the growth temperature. The resulting films were single crystal and exhibited epitaxial registry with respect to the sapphire substrate.…”

The Preparation of Large-Area Single Crystal MoS2 on Quartz Substrate for Photodetector

“…So far, the growth of MoS 2 are typically performed on different substrate (SiO 2 5,8 , mica 9 , sapphire 10 23 , Ir(ppy) 2 24 , HfO 2 25 , Au 26 etc), growth temperature (650-1000 o C), the chamber pressure and precursor-substrate distance systemically on MoS 2 . Moreover, wafer scale MoS 2 film has been grown using a two-step process, which includes the pre-deposition and sulfurization of Mo film on SiO 2 .…”