despite their sophisticated designs, most of these devices only work in a narrow bandwidth range and require complicated fabrication procedures. These issues impede large-area applications for energy harvesting and photothermal energy generation. A large-area, wide angular tolerance, broadband absorber with ultrathin metallic nanoparticles has been recently proposed. [38] However, the suitability of this device for photothermal energy generation applications remains unclear because the stability of these metallic nanostructures at high temperatures is usually low.Due to the outstanding properties, such as compatibility with the complementary metal oxide semiconductor (CMOS) processes, high temperature resistance, large loss in the visible range, and high reflectivity in the infrared (IR) range, [39] titanium nitride (TiN) has emerged as an ideal material for the preparation of near-perfect absorbers for the high-temperature solar/thermophotovoltaics applications. [39,40] A 5-cycle TiN/silicon dioxide (SiO 2 ) multilayer-based absorber has been reported with an average solar absorptivity of 0.68 [1] and a near-perfect absorption, which requires further enhancement. The high average absorptivity of ≈95% by a ringlike TiN layer using a metamaterial absorber was achieved for the entire visible range. [41] However, the bandwidth of these devices is limited in the visible range. For ultrabroadband light absorption, 3D-truncated TiN nanopillars have been demonstrated for the visible and NIR spectral regions with an average absorptivity of 0.94. [42] This TiN nanopillar-based device, which comprises silicon nanopillars with a large thickness (>1 µm), typically requires expensive, time-consuming fabrication processes, and its thermal emissivity is not verified. Therefore, there are few experimental reports on the large-area ultrathin TiN-based metasurfaces for the strong ultrabroadband light absorption with low thermal emissivity.In this paper, we demonstrate wide-angle ultrabroadband strong light absorption that covers almost the whole solar spectrum (250-2250 nm) by the TiN-based metasurface with an ultrathin thickness (330 nm) on a quartz substrate. The metasurface incorporates dielectric cylinder arrays, a TiN layer, and SiN x layers. This metasurface fundamentally differs from the previously reported absorbers. This device, which uses a symmetrical SiO 2 grating, is independent of incident polarization. Specifically, the carefully designed metasurface exhibits a prominent absorption of both polarizations over wide angles. The outstanding performances of this absorber are realized by Large-area, ultrathin devices with strong ultrabroadband absorption and high angular tolerance are in demand for applications such as ultraviolet protection, energy harvesting, photodetectors, and thermal imaging technology. Although there have been considerable efforts to design and fabricate these devices, the simultaneous realization of all desired properties has not been achieved. A 330 nm thick metasurface with an area of 3 cm 2 is e...