2010
DOI: 10.1063/1.3361482
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Large constriction of lattice constant in epitaxial magnesium oxide thin film: Effect of point defects on lattice constant

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Cited by 28 publications
(26 citation statements)
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“…As a next step, further thermal energy could promote the diffusion of the oxygen vacancies into the interior of the NiO NP, which possesses many innate nickel vacancies. Last, the oxygen vacancies encounter the nickel vacancies due to the electrostatic attraction and generate Schottky defects, which nullify the nickel vacancies and cause the lattice constriction [24] (Figure 5).…”
mentioning
confidence: 99%
“…As a next step, further thermal energy could promote the diffusion of the oxygen vacancies into the interior of the NiO NP, which possesses many innate nickel vacancies. Last, the oxygen vacancies encounter the nickel vacancies due to the electrostatic attraction and generate Schottky defects, which nullify the nickel vacancies and cause the lattice constriction [24] (Figure 5).…”
mentioning
confidence: 99%
“…The contraction of lattice constants is predicted with the Schottky defects consisting a pair of Mg and O atoms. 19 Interestingly, AFM image revealed nano-cube MgO particles grown on Si(001) substrates. Figure 3 shows AFM images of MgO prepared in oxygen pressure of (a) 75 and (b) 200 mTorr at substrate temperature of 750 C. Nano-cube particles were grown on the samples prepared in oxygen pressure of 200 mTorr.…”
Section: Resultsmentioning
confidence: 98%
“…The details of the pseudopowder XRD mapping can be found elsewhere. 19 The surface morphology was observed by Atomic Force Microscopy (AFM). X-ray Photoelectron Spectroscopy (XPS) was employed to analyze an MgO deposited on the surface of Si(001) substrate.…”
Section: Methodsmentioning
confidence: 99%
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“…Due to the electrostatic attraction effect, the Schottky defects could appear when the oxygen vacancies encounter the nickel vacancies, causing lattice contraction. 54 Besides, Mo/W ions could also occupy some vacancies and bond with Ni atoms, which decreases the vacancies in the crystalline state. The DTF calculation proves this process.…”
Section: Relative Resistancementioning
confidence: 99%