Large Cu wire wedge bonding process for power devices

Ling, Jamin; Xu, Tao; Luechinger, Christoph

doi:10.1109/eptc.2011.6184375

Cited by 13 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All the shear strength values were above 2.7 kg. As a general quality index for heavy wire bonding, the bond pull strength is required to be equal to the wire breaking load, while the shear value should be >1.5 times the load [13]. Considering that the breaking load of the Cu wires that were used in this study ranges from 1600 to 1800 g, both the pull and shear strengths obtained were reasonable.…”

Section: Characterization and Reliability Of The Bonded Cu Heavy Wiresmentioning

confidence: 92%

Cu Heavy Wirebonding for High Power Device Interconnection

Lee

Kim

Jeong

et al. 2013

International Symposium on Microelectronics

View full text Add to dashboard Cite

To replace conventional Al heavy wire bonding in interconnecting power devices, we have explored the use of Cu heavy wire bonding, which offers superior electrical, mechanical, and thermal properties compared to Al wires that leads to better interconnection reliability. Chip pad metallizations that are strong enough to support Cu wires firmly against chip pads and endure high bonding parameters were first evaluated by 3D finite element modeling (FEM) of the Cu heavy wire bonding process. The FEM results indicated that an electroless plated Ni layer may be used as the primary candidate for the pad metallization of Cu heavy wire bonding because it enables the reinforcement of standard Al pads in power devices and allows for metallurgical interaction with Cu wires. Further, the deposition of the Ni layer entailed a simple protocol. The three major bonding parameters including force, ultrasonic energy, and time were optimized to achieve successful wire bonding of 300-μm-thick Cu wires to pads strengthened with Ni layers in power devices. Microstructures and compositions of the bonded interface were analyzed by transmission electron microscopy, which provided insight into the bonding characteristics between the Cu wires and the Ni pads. Reliability tests of the bonding were also carried out by the thermal shock test and pressure cooker test.

show abstract

Section: Characterization and Reliability Of The Bonded Cu Heavy Wiresmentioning

confidence: 92%

Cu Heavy Wirebonding for High Power Device Interconnection

Lee

Kim

Jeong

et al. 2013

International Symposium on Microelectronics

View full text Add to dashboard Cite

show abstract

“…Aluminum wedge wirebonding remains the most widely used topside interconnection and has been an area of intense R&D to improve reliability. The most dramatic change is the use of copper wire instead of aluminum [30,31]. The higher thermal and electrical conductivity of the wire allows increased current density for a given reliability or greater reliability at a given current density.…”

Section: New Topside Interconnectionsmentioning

confidence: 99%

High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules

Mumby-Croft¹,

Li²,

Dai³

et al. 2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

View full text Add to dashboard Cite

The properties of wide band gap (WBG) semiconductors are beneficial to power electronics applications ranging from consumer electronics and renewable energy to electric vehicles and high-power traction applications like high-speed trains. WBG devices, properly integrated, will allow power electronics systems to be smaller, lighter, operate at higher temperatures, and at higher frequencies than previous generations of Si-based systems. These will contribute to higher efficiency, and therefore, lower lifecycle costs and lower CO 2 emissions. Over 20 years have been spent developing WBG materials, low-defect-density wafers, epitaxy, and device fabrication and processing technology. In power electronics applications, devices are normally packaged into large integrated modules with electrical, mechanical and thermal connection to the system and control circuit. The first generations of WBG device have used conventional or existing module designs to allow drop-in replacement of Si devices; this approach limits the potential benefit. To realize the full potential of WBG devices, especially the higher operating temperatures and faster switching frequency, a new generation of packaging design and technology concepts must be widely implemented.

show abstract

Cu and Al-Cu composite-material interconnects for power devices

Ling

Chen

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

View full text Add to dashboard Cite

Large Cu wire wedge bonding process for power devices

Cited by 13 publications

References 7 publications

Cu Heavy Wirebonding for High Power Device Interconnection

Cu Heavy Wirebonding for High Power Device Interconnection

High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules

Cu and Al-Cu composite-material interconnects for power devices

Contact Info

Product

Resources

About