Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Alvarez, José; Liao, Meiyong; Koide, Yasuo

doi:10.1063/1.2048807

Cited by 31 publications

(22 citation statements)

References 25 publications

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“…d) Spectral responsivity of the MSM photodetector measured on the as‐grown state and after the high‐temperature annealing at 600 °C, respectively. Reproduced with permission . Copyright 2005, American Institute of Physics Publishing.…”

Section: Diamondmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Diamondmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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“…By using H-plasma treating the type-Ib diamond substrate, one can tailor the overall photoresponse such as the dark current, sensitivity, and spectral response [6]. The H-plasma markedly enhanced the DUV photocurrent by 10 5 [81][82][83]. The highest responsivity reached 230 A/W [81] and the 210 nm/visible light injection ratio reached 10 4 .…”

Section: Other Factors Affecting the Photoresponse Propertiesmentioning

confidence: 99%

Progress in semiconductor diamond photodetectors and MEMS sensors

Liao

2021

Functional Diamond

Self Cite

166

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Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronics and microelectromechanical systems (MeMs). the wide-bandgap energy of diamond offers the intrinsic advantage for solar-blind detection of DUV light. the recent progress in high-quality single-crystal diamond growth, doping, and devices design have led to the development of solar-blind DUV detectors satisfying the requirement of high Sensitivity, high Signal-to-Noise ratio, high spectral Selectivity, high Speed, and high Stability. On the other hand, the outstanding mechanical hardness, chemical inertness, and intrinsic low mechanical loss of diamond enable the development of MeMs sensors with boosted sensitivity and robustness. the micromachining technologies for diamond developed in these years have opened the avenue for the fabrication of high-quality single-crystal diamond mechanical resonators. in this review, we report on the recent progress in diamond DUV detectors and MeMs sensors, which includes the device principles, design, fabrication, micromachining of diamond, and devices physics. the potential applications of these sensors and a perspective are also described.

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“…Diamond photoconductors with metal-semiconductor-metal (MSM) structures consisting of two Schottky contacts arranged back to back yielding a gain of % 1000 under deep UV irradiation have also been reported. 11 This anomalous behavior that was later attributed to thermionic field emission and field emission tunneling in different excitation regimes 12 will not be considered further in this work.…”

Section: Introductionmentioning

confidence: 97%

Photoconductive gain in single crystal diamond detectors

Grünwald

Schreck

2021

Journal of Applied Physics

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Diamond crystals equipped with two metal electrodes can be operated as solid state ionization chambers for the detection of energetic radiation. Under irradiation with single α particles, the generated free electrons and holes are collected with a maximum efficiency close to 100%. When the same detectors are used for dosimetry in high intensity and high energy photon or particle beams, photoconductive gain G with values up to % 10 6 is frequently observed as described in the literature. In this work, we studied theoretically the irradiation induced conductivity of perfect diamond single crystals with ohmic contacts containing nitrogen and boron with concentrations N N and N B , respectively, as only chemical impurities. Based on four rate equations, two considering the charge states of N and B and two the concentrations of free carriers n and p, and, additionally, the neutrality condition, we could derive analytical solutions for the gain G as a function of impurity concentrations, crystal thickness, and excitation density. It turned out that G varies systematically with the compensation ratio R ¼ (N N À N B )=N B over five orders of magnitude. For R % 10 3 , the gain G is close to unity. With decreasing R, the gain increases /1=R until saturation is reached for R ( 1 and G % 10 4 -10 5 . Our theoretical data yield plausible explanations for the major trends that have been found experimentally in previous studies. They provide a valuable guideline for the future synthesis of diamond crystals to be used for manufacturing UV and radiation detectors.

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Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Cited by 31 publications

References 25 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Progress in semiconductor diamond photodetectors and MEMS sensors

Photoconductive gain in single crystal diamond detectors

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