Large diameter 6H-SiC for microwave device applications

Hobgood, H. McD.; Barrett, D.L.; McHugh, J.P.; Clarke, R.C.; Sriram, S.; Burk, Albert A.; Greggi, J.; Brandt, C.D.; Hopkins, R.H.; Choyke, W. J.

doi:10.1016/0022-0248(94)91269-6

Cited by 82 publications

(24 citation statements)

References 3 publications

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“…To achieve high resistivity SI SiC, vanadium is incorporated into the crystal during growth, acting as an amphoteric deep dopant. Various growth techniques have been developed to produce large-area single crystal SiC, including the modified Lely method ) and by physical vapour transport (Barrett et al 1993;Hobgood et al 1994;Augustine et al 1997). The main commercial growth technique for SiC substrates is physical vapour transport, with material available from Cree and a number of other suppliers (eg.…”

Section: Sic Materials Propertiesmentioning

confidence: 99%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

176

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We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

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Section: Sic Materials Propertiesmentioning

confidence: 99%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

176

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“…[1][2][3][4] These defects intersect the surface of (0001) oriented wafers sliced from such boules and limit the usable area of the substrate. This is problematic for the fabrication of large surface area devices intended for high voltage/high current applications.…”

Section: Introductionmentioning

confidence: 99%

Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

Sanchez

Kuhr

Heydemann

et al. 2000

Journal of Elec Materi

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“…Frank related the formation of pipes around superdislocations to the need of eliminating highly stressed regions around these defects. Now Frank's idea for the reason of the pipe formation is generally accepted [2][3][4][5][6][7][8][9][10], and the presence of superdislocations within the pipes (commonly growing in the crystal growth direction) is confirmed experimentally (e.g., [4,5]). …”

Section: Introductionmentioning

confidence: 99%

Split and sealing of dislocated pipes at the front of a growing crystal

Gutkin

Sheĭnerman

2004

Physica Status Solidi (b)

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A model is suggested for the split of dislocated pipes at the front a growing crystal. Within the model, the pipe split occurs through the generation of a dislocation semi-loop at the pipe and crystal surfaces and its subsequent expansion into the crystal interior. The strain energy of such a dislocation semi-loop as well as the stress field of a dislocated pipe perpendicular to a flat crystal surface are calculated. The parameter regions are determined at which the expansion of the dislocation semi-loop is energetically favorable and, thus, the pipe split becomes irreversible. A mechanism is proposed for the formation of a stable semi-loop resulting in the split and possible subsequent overgrowth of the dislocated pipe.

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Large diameter 6H-SiC for microwave device applications

Cited by 82 publications

References 3 publications

New materials for radiation hard semiconductor dectectors

New materials for radiation hard semiconductor dectectors

Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

Split and sealing of dislocated pipes at the front of a growing crystal

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