Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Waizumi, Hiroki; Mamun, Muhammad Shamim Al; Takaoka, Tsuyoshi; Alam, Iftekharul; Tanaka, Yuzuru; Ando, Atsushi; Wang, Zhipeng; Arafune, Ryuichi; Komeda, Tadahiro

doi:10.1016/j.apsusc.2021.151252

Cited by 11 publications

(9 citation statements)

References 62 publications

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“…A clear shift toward the right-hand side was observed, suggesting acceptor-type behavior by the TCNQ solution. The acceptor behavior of the TCNQ molecule was consistent with the results obtained under vacuum sublimation of TCNQ on an MoS 2 channel …”

Section: Resultssupporting

confidence: 87%

“…The charge transfer for each molecule can be estimated using VASP calculations. Considering the van der Waals interactions, we previously calculated the charge transfer from the MoS 2 substrate to the TCNQ and F4-TCNQ molecules under vacuum . The result showed 0.15 and 0.32 e – per molecule, respectively .…”

Section: Resultsmentioning

confidence: 99%

“…Considering the van der Waals interactions, we previously calculated the charge transfer from the MoS 2 substrate to the TCNQ and F4-TCNQ molecules under vacuum . The result showed 0.15 and 0.32 e – per molecule, respectively . We then executed the calculations without considering the van der Waals forces because we wanted to compare the solution effects with and without considering van der Waals interactions.…”

Section: Resultsmentioning

confidence: 99%

“…The acceptor behavior of the TCNQ molecule was consistent with the results obtained under vacuum sublimation of TCNQ on an MoS 2 channel. 43 Here, the behaviors of the TCNQ and F4-TCNQ molecules are compared. The F4-TCNQ molecules have a slightly higher electron affinity than that for TCNQ, where four H atoms in the perimeter are replaced with F atoms.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Nasiruddin,

Wang,

Waizumi

et al. 2023

ACS Appl. Nano Mater.

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A microfluid-assisted solution field-effect transistor (FET) with nanoscale channels of atomically thin MoS 2 layers was constructed. The source−drain current (I d ) vs gate voltage (V g ) characteristics (I d −V g ) were examined with a focus on the threshold voltage (V th ) at the onset of the I d −V g curve. I d −V g changed when the channel contacted the tetracyanoquinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) solutions in isopropyl alcohol (IPA), acetonitrile (ACN), and dimethyl sulfoxide (DMSO). The shift in V th from the pure solvent condition (ΔV th ) increased monotonically with the concentration, which was successfully simulated using Langmuir-type adsorption kinetics. We conclude that the TCNQ and F4-TCNQ solutes were partially solvated by the solvent and adsorbed on the MoS 2 channel. Simultaneously, the saturated ΔV th value revealed a significant difference between the TCNQ and F4-TCNQ solutes. The ratio of saturated ΔV th of F4-TCNQ compared to that of TCNQ showed a decrease of 4.2, 1.7, and 1.3 for IPA, ACN, and DMSO, respectively. These results coincided with the order of the dielectric constants of these solvents (18.0, 36.0, and 46.6, respectively). The solutes produced the I d −V g curve by both charge transfer and the gating effect, the latter of which was screened by the presence of a solvent. This study demonstrates that a solution FET can be employed in solid−solution interface chemistry.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Nasiruddin,

Wang,

Waizumi

et al. 2023

ACS Appl. Nano Mater.

Self Cite

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“…Thereby, exploring an effective strategy to tune the energy levels and the charge distribution of the frontier molecular orbitals of π-conjugated 2D COFs is very important to improve their electronic/photophysical properties and promote their practical applications in various fields. Various methods have been reported for tuning the frontier energy levels of other 2D materials, such as structural modifications, defect engineering, adding impurities, or doping with additives. − Among them, appropriate electron or hole doping by adding n- or p-type additives is considered one of the most conventional and feasible ways to modulate the frontier energy level of functional materials and, then to control charge-carrier injection, has been exploited extensively in a number of applications. − Therefore, n-type doping of the porphyrin-based COF monolayer with the Na adatom has been investigated recently by density functional theory (DFT) calculations . It was observed that such π-conjugated 2D COFs can be n-doped efficiently by accepting a full electron from the Na dopant and the interfacial energy-level alignment can be adjusted.…”

Section: Introductionmentioning

confidence: 99%

Effective Fermi-Level Modulation of Two-Dimensional Conjugated Covalent Organic Frameworks Achieved by Introducing p-Type Organic Dopants

Chen

Liang

et al. 2023

Macromolecules

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Covalent organic frameworks (COFs) are a new emerging class of two-dimensional functional materials, and their unique electronic character plays a key role in practical applications. Here, to provide a useful strategy to tune the electronic character of COFs, doping effects with organic molecular acceptors, TCNQ, F4TCNQ, and TCNE, on the frontier orbital energy levels of sp2c-COF and COF366 mono- and bilayers are explored. Due to the charge transfer from COFs to dopants, the Fermi level is shifted to a lower energy and drops into the top valence band of sp2c-COF and COF366, and the VBM/CBM energy level of COFs is also decreased. Moreover, the increased electron density shifts the LUMO energy level of dopants to a higher energy. Then, two electronic states, the top valence band of COFs and the LUMO of the p-type dopants, are pinned around the Fermi level. It means that the organic molecular acceptor serves as an effective p-type dopant for COFs. In addition, it is confirmed that the stronger the electron-accepting ability of p-type dopants or the higher the surface density of the dopants, the larger the variation of the frontier energy levels of COF monolayers will be. Thereby, an overall linear correlation between the electronic property variations of COFs and the charge transfer amount from COFs to p-type dopants is observed. Our results proved that surface doping with organic molecular acceptors is a reliable approach to modulate the frontier energy level of COFs, which provides an effective strategy to optimize the performance of COF-based devices.

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V‐Shaped Heterostructure Nanocavities Array with CM and EM Coupled Enhancement for Ultra‐Sensitive SERS Substrate

Rahim,

Ma,

Saleem

et al. 2024

Advanced Science

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The field of semiconductor surface‐enhanced Raman scattering (SERS) substrates has experienced significant advancements, leading to a wide range of applications in several fields. However, the quest for new ultra‐sensitive semiconductor SERS materials is still of utmost importance. In this regard, an efficient and novel substrate, F4TCNQ/MoS2 heterostructure is introduced, assisted by V‐shaped aluminum anodic oxide (AAO) nanocavities with different depths. Utilizing the efficient charge transfer of organic/inorganic semiconducting heterostructure and the photoconfinement capability of the nanocavity structure of the AAO nanotemplate, excellent stability, fast sensing, enhanced Raman, and photodegradation activities are achieved. Due to its unique 3D structure, the optimized F4TCNQ/MoS2/AAO with 1500 nm depth achieves ultra‐high sensitivity detection of 9.0×10−16 M for conventional probe molecules. Furthermore, precise detection of water contaminants is observed for the first time with a V‐shaped heterostructure due to combined organic/inorganic features that differ significantly from conventional MoS2 structures or other metal/inorganic or inorganic/inorganic semiconductors. This research presents a novel and versatile strategy for SERS and demonstrates its diverse potential performance in practical applications.

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Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Cited by 11 publications

References 62 publications

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Effective Fermi-Level Modulation of Two-Dimensional Conjugated Covalent Organic Frameworks Achieved by Introducing p-Type Organic Dopants

V‐Shaped Heterostructure Nanocavities Array with CM and EM Coupled Enhancement for Ultra‐Sensitive SERS Substrate

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Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Cited by 11 publications

References 62 publications

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS2 Layers

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS2 Layers

Effective Fermi-Level Modulation of Two-Dimensional Conjugated Covalent Organic Frameworks Achieved by Introducing p-Type Organic Dopants

V‐Shaped Heterostructure Nanocavities Array with CM and EM Coupled Enhancement for Ultra‐Sensitive SERS Substrate

Contact Info

Product

Resources

About

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers