Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions

Greullet, F.; Snoeck, E.; Tiuşan, C.; Hehn, M.; Lacour, Daniel; Lenoble, O.; Magén, Cesar; Calmels, L.

doi:10.1063/1.2841812

Cited by 43 publications

(33 citation statements)

References 19 publications

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“…Even though very high P values (-80 %) have been observed in epitaxial magnetite films [5], the possibility to obtain full spin polarization in this material is still disputed [4,6]. The large number of recent publications on this topic underlines the high interest in this material [5][6][7][8][9][10][11][12][13][14][15][16], but the practical achievement of (the expected) high performances in functional spintronic devices like magnetic tunnel junctions (MTJ) incorporating Fe 3 O 4 has not been reached yet [9][10][11]13].…”

Section: Introductionmentioning

confidence: 99%

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Mantovan¹,

Lamperti²,

Georgieva³

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract. Magnetite (Fe 3 O 4 ) is predicted to be half metallic at room temperature and it shows the highest Curie temperature among oxides. The use of Fe 3 O 4 thin films is therefore promising for spintronic devices such as magnetic tunnel junctions and magnetoresistive sensors. The structural, magnetic, and magnetotransport properties of magnetite are reported to be strongly dependent on the growth conditions. We have developed a very simple deposition chamber for growing thin magnetite films via a chemical vapor deposition process based on the Fe 3 (CO) 12 carbonyl precursor. The structural, morphological and magnetic properties of the as deposited Fe 3 O 4 films have been investigated by means of time of flight secondary ion mass spectrometry, grazing incidence X-ray diffraction, X-ray reflectivity, atomic force microscopy, conversion electron Mössbauer spectroscopy, and superconducting quantum interference device magnetometry. Magnetotransport measurements show magnetoresistance up to -2.4% at room temperature at the maximum applied field of 1.1 T.Resistivity measurements in the 100-300 K temperature range reveal that the magnetotransport properties of the Fe 3 O 4 films are governed by inter-granular tunneling of the spin polarized electrons.The spin polarization is estimated to be around -16%. A possible route for increasing the spinpolarized performances of our magnetite films is proposed. We have also deposited Fe 3 O 4 /MgO/Co stacks by using a combined chemical vapor-and atomic layer-deposition process. The trilayer's hysteresis curve evidences the presence of two distinct switching fields making it promising for magnetite-based magnetic tunnel junction applications.

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Section: Introductionmentioning

confidence: 99%

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Mantovan¹,

Lamperti²,

Georgieva³

et al. 2010

J. Phys. D: Appl. Phys.

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“…20 More or less realistic explanation of the origin of MMR is changes in the large minority density of state (DOS) of CoFe-O above the Fermi level. [21][22][23] In Ref. 6, the theory of the AC spin-valve effect in symmetric tunneling magnetoresistance (TMR) 2017) junctions and prediction of negative AC magnetoresistance due to resonant amplification and depletion of the spin accumulation were proposed.…”

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confidence: 99%

Remote microwave monitoring of magnetization switching in CoFeB/Ta/CoFeB spin logic device

Моргунов

L’vova

Таланцев

et al. 2017

Applied Physics Letters

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Stable magnetic states of the MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve as well as transitions between the states were detected by microwave magnetoresistance (MMR) measured in the cavity of an electron spin resonance spectrometer. Advantages of this experimental technique are the possibility to study the orientation dependence of the MMR, the absence of the additional contact/sample interfaces, the wireless control of the spin valves, and the compatibility of the MMR measurements with ferromagnetic resonance experiments. The magnetic field dependence of the first derivation of the microwave absorption allows one to judge about the negative magnetoresistance of the layers and positive interlayer giant magnetoresistance. The obtained experimental results could be used for engineering of the microwave high sensitive sensors available for remote identification of the stable magnetic and logic states of the spin valves needful in medical spintronics to detect biological objects labeled with nanoparticles.

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“…These spin magnetic moments tend to rotate towards the same direction under a large magnetic field, as presented in Fig. 6 [17]. The conductivity s of the heterostructure can be expressed as…”

Section: Resultsmentioning

confidence: 98%

Positive and negative magnetoresistance in Fe3O4-based heterostructures

Zhang

et al. 2012

Journal of Magnetism and Magnetic Materials

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Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions

Cited by 43 publications

References 19 publications

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Remote microwave monitoring of magnetization switching in CoFeB/Ta/CoFeB spin logic device

Positive and negative magnetoresistance in Fe3O4-based heterostructures

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