2023
DOI: 10.1063/5.0135831
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Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

Abstract: It is technically challenging to shrink the size of a tunneling magnetoresistance reader to below 20 nm for magnetic recording technology beyond 4 Tb/in2 due to its complex film stack. Recently, we proposed a reader architecture based on the inverse spin Hall effect to resolve those challenges, referred below as spin–orbit torque (SOT) reader, whose structure consists of a SOT layer and a ferromagnetic layer. However, the heavy metal-based SOT reader has small output voltage and low signal-to-noise ratio (SNR)… Show more

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Cited by 7 publications
(2 citation statements)
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“…[ 76 ] Measurements of textured Bi 0.85 Sb 0.15 (112¯0$11\overline{2}0$)/[Co/Pt] multilayers deposited by sputtering also gave a remarkable ξDLjBiSb${\xi}_{\mathrm{DL}}^{{j}_{\mathrm{BiSb}}}$ = 10.7. [ 38 ] Studies of sputtered Bi 1− x Sb x films report ξDLjBiSb$\xi _{\rm DL}^{j_{\rm BiSb}}$ of order unity, [ 18,19,40,41,77 ] whereas measurements of epitaxial Bi 0.74 Sb 0.26 (0001) with a ferromagnetic layer grown ex situ [ 42 ] gave a negligible efficiency and spin pumping measurements of FeGaB/BiSb gave an efficiency of 1%. [ 44 ] The large difference of ξDLjBiSb$\xi _{\rm DL}^{j_{\rm BiSb}}$ reported in the literature was initially attributed to the difference in the crystalline quality and orientation of the samples.…”
Section: Resultsmentioning
confidence: 99%
“…[ 76 ] Measurements of textured Bi 0.85 Sb 0.15 (112¯0$11\overline{2}0$)/[Co/Pt] multilayers deposited by sputtering also gave a remarkable ξDLjBiSb${\xi}_{\mathrm{DL}}^{{j}_{\mathrm{BiSb}}}$ = 10.7. [ 38 ] Studies of sputtered Bi 1− x Sb x films report ξDLjBiSb$\xi _{\rm DL}^{j_{\rm BiSb}}$ of order unity, [ 18,19,40,41,77 ] whereas measurements of epitaxial Bi 0.74 Sb 0.26 (0001) with a ferromagnetic layer grown ex situ [ 42 ] gave a negligible efficiency and spin pumping measurements of FeGaB/BiSb gave an efficiency of 1%. [ 44 ] The large difference of ξDLjBiSb$\xi _{\rm DL}^{j_{\rm BiSb}}$ reported in the literature was initially attributed to the difference in the crystalline quality and orientation of the samples.…”
Section: Resultsmentioning
confidence: 99%
“…The presence of Dirac points in their band structure endows TIs with exceptional surface conductivity, making them versatile candidates for applications in various fields, including quantum computing, topological photonics, energy-efficient electronics, and more importantly, in the field of spintronics. , The importance of TIs to spintronics lies in their properties to enable efficient spin transport, manipulation, and detection, which is fundamental to the development of advanced spin-based devices with notable energy efficiency, enhanced performance, and functionality . Within the realm of spintronics, the emergence of spin–orbit torque magnetic random access memories (SOT-MRAMs) and SOT readers beyond 4 Tb/in 2 magnetic recording technology has garnered extensive attention for its potential as an energy-efficient solution for neuromorphic computing and data storage. In SOT-based devices, the most important layer is the spin Hall layer, which converts charge current to spin current through a phenomenon known as the spin Hall effect (SHE) and vice versa, i.e., spin flow is converted to charge current through the inverse spin Hall effect (ISHE). ,, Beyond conventional heavy metals, , some of the topological materials have been studied as spin-to-charge conversion systems in the SOT devices, such as BiSb, , Bi 2 Se 3 , and Bi 2 Te 3 , which exhibit high spin Hall angles (SHAs) or SOT efficiencies due to their strong spin–orbit coupling and topological electronic structures.…”
Section: Introductionmentioning
confidence: 99%